Publikationen von Matthias Scheffler

Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors, S. 1301 - 1304 (Hg. Zimmermann, R.). International Conference on the Physics of Semiconductors, Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Ruggerone, P.; Kohler, B.; Wilke, S.; Scheffler, M.: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems, S. 113 - 126 (Hg. Bertel, E.). 134th W.-E.-Heraeus-Seminar, Honnef, 17. Oktober 1994 - 20. Oktober 1994. World Scientific, Singapore (1995)

Heinemann, M.; Scheffler, M.: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces, S. 297 - 300 (Hg. Lengeler, B.; Lüth, H.; Mönch, W.; Pollmann, J.). 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, 14. Juni 1993 - 18. Juni 1993. World Scientific, Singapore (1994)

Oppo, S.; Fiorentini, V.; Scheffler, M.: Surface alloying and surfactant action of Sb on Ag(111). In: Materials Research Society Symposium Proceedings, Bd. 317, S. 323 - 328. Materials Research Society, New York (1994)

Dabrowski, J.; Pehlke, E.; Scheffler, M.: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992, S. 389 - 392 (Hg. Jiang, P.; Zheng, H.-Z.). 21st International Conference on the Physics of Semiconductors (ICPS-21), Beijing, China, 10. August 1992 - 14. August 1992. World Scientific, Singapore (1992)

Máca, F.; Scheffler, M.; Berndt, W.: A LEED analysis of sqrt{3} x sqrt{3} S on Pd(111). In: Proc. 3rd Symposium on Surface Physics: Physics of Solid Surfaces, S. 195 - 198. (1985)

Bernholc, J.; Lipari, N. O.; Pantelides, S. T.; Scheffler, M.: Theory of point defects and deep impurities in semiconductors. In: Defects and Radiation Effects in Semiconductors, S. 1 - 17 (Hg. Hasiguti, R. R.). 11th International Conference on Defects and Radiation Effects in Semiconductors, Oiso, Japan, 08. September 1980 - 11. September 1980. Institute of Physics, London (1981)

Scheffler, M.; Kambe, K.; Forstmann, F.; Jacobi, K.: Angle-resolved photoemission of the oxygen overlayer on Ni,(001): Part 1 (Calculations). In: Proceedings of the 7th International Vacuum Congress and the 3rd International Conference on Solid Surfaces of the International Union for Vacuum Science, Technique and Applications, S. 2223 - 2226 (Hg. Dobrozemsky, R.). 7th International Vacuum Congress, Vienna, Austria, 12. September 1977 - 16. September 1977. (1977)

Scheffler, M.; Kambe, K.; Forstmann, F.: Energy and angle-resolved photoemission. In: Proceedings International Symposium on Photoemission, S. 227 (Hg. R.F. Willis, R.F.; Feuerbacher, B.; Fitton, B.; Backx, C.). ESA, Paris, France (1976)

Scheffler, M.: Efficient Discovery of Improved Energy Materials by an AI-Guided Workflow: The Example of Thermal Conductivity. IOP-HU Early Career Researcher Conference on Condensed Matter Physics, Liyang, China (2023)

Scheffler, M.: Advancements in Exchange-Correlation Functionals for Ground and Excited States. IOP-FHI Workshop, Frontiers of Electronic-Structure Theory and Materials Genomics, Beijing, China (2023)

Scheffler, M.: Finding "Rules" and "Genes" for Materials Properties and Functions by Artificial Intelligence. IOP-CAS Daniel Tsui Distinguished Lecture, Institute of Physics, Chinese Academy of Sciences, Beijing, China (2023)

Scheffler, M.: Welcome and Overview, and The Role of Volker Heine for Computational Materials Science. NOMAD Workshop on Data-centric Cruising for New and Novel Materials, Mechanisms, and Insights, Kiel, Germany (2023)

Scheffler, M.: Training Activities of the NOMAD CoE. 5th NOMAD Project Meeting, Aalto, Finland (2023)

Scheffler, M.: Efficient Discovery of Improved Energy Materials by an AI-guided Workflow: The Example of Thermal Conductivity. Workshop, Sino-German Mobility Program, Berlin, Germany (2023)

Scheffler, M.: Finding "Rules" and "Genes" for Materials Properties and Functions by Artificial Intelligence. DMI Signature Lecture, Durham, NC, USA (2023)

Scheffler, M.: Electron-Vibrational Coupling in and Beyond the Phonon Picture. Seminar, Departments of Mechanical Engineering and Materials Science and Chemistry, Duke University, Durham, NC, USA (2023)

Scheffler, M.: Learning Rules for High-Throughput Screening of Materials Properties and Functions. TMS 2023, 152th Annual Meeting & Exhibition, San Diego, CA, USA (2023)

Scheffler, M.: Finding "Rules" and "Genes" for Materials Properties and Functions by Artificial Intelligence. Fundamentals of Heterogeneous Catalysis (FUNCAT 2023), Cardiff, UK (2023)

Scheffler, M.: The NOMAD Center of Excellence and The Max Planck Society. 4th NOMAD Project Meeting, Vienna, Austria (2023)