Publikationen von Momme Winkelnkemper

Yan, Q., P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, M. Scheffler und C.G. Van de Walle: Band parameters and strain effects in ZnO and group-III nitrides. Semiconductor Science and Technology 26, 014037 (2011).

Rinke, P., M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer und M. Scheffler: Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN. Physical Review B 77 (7), 075202 (2008).

Winkelnkemper, M., R. Seguin, S. Rodt, A. Schliwa, L. Reißmann, A. Strittmacher, A. Hoffmann und D. Bimberg: Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots. Journal of Applied Physics 101 (11), 113708 (2007).

Seguin, R., A. Schliwa, T.D. Germann, S. Rodt, K. Pötschke, A. Strittmatter, U.W. Pohl, D. Bimberg, M. Winkelnkemper, T. Hammerschmidt und P. Kratzer: Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots. Applied Physics Letters 89 (26), 263109 (2006).

Winkelnkemper, M., A. Schliwa und D. Bimberg: Interrelation of structural and electronic properties in In_xGa_1-xN/GaN quantum dots using an eight-band k · p model. Physical Review B 74 (15), 155322 (2006).