Publikationen von Thomas Hammerschmidt

Hammerschmidt, T., P. Kratzer und M. Scheffler: Erratum: Analytic many-body potential for InAsÕGaAs surfaces and nanostructures: Formation energy of InAs quantum dots [Phys. Rev. B 77, 235303 (2008)]. Physical Review B 81 (15), 159905(E) (2010).

Kratzer, P. und T. Hammerschmidt: Atomic processes in molecular beam epitaxy on strained InAs(137): A density-functional theory study. Physical Review B 80 (3), 035324–1-035324–7 (2009).

Hammerschmidt, T., P. Kratzer und M. Scheffler: Analytic many-body potential for InAs/GaAs surfaces and nanostructures: Formation energy of InAs quantum dots. Physical Review B 77 (23), 235303–1-235303–16 (2008).

Hammerschmidt, T., P. Kratzer und M. Scheffler: Elastic response of cubic crystals to biaxial strain: Analytic results and comparison to density functional theory for InAs. Physical Review B 75 (23), 235328 (2007).

Migliorato, M.A., D. Powell, A.G. Cullis, T. Hammerschmidt und G.P. Srivastava: Composition and strain dependence of the piezoelectric coefficients in In_xGa_1-xAs alloys. Physical Review B 74 (24), 245332 (2006).

Seguin, R., A. Schliwa, T.D. Germann, S. Rodt, K. Pötschke, A. Strittmatter, U.W. Pohl, D. Bimberg, M. Winkelnkemper, T. Hammerschmidt und P. Kratzer: Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots. Applied Physics Letters 89 (26), 263109 (2006).

Kunert, R., E. Schöll, T. Hammerschmidt und P. Kratzer: Strain field calculations of quantum dots - a comparison study of two methods. In: Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. (Hrsg.): W. Jantsch und F. Schäffler. (AIP Conference Proceedings, Vol. 893). Springer, Berlin, 73–74 (2007).

Hammerschmidt, T. und P. Kratzer: Role of strain relaxation during different stages of InAs quantum dot growth. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Hrsg.): J. Menendez und C.G. Van de Walle. (AIP Conference Proceedings, Vol. 772). American Institute of Physics, USA, 601–602 (2005).

Hammerschmidt, T.: Growth simulations of InAs/GaAs quantum dots. Technische Universität Berlin