Publikationen von Matthias Scheffler

Ratsch, C., P. Ruggerone und M. Scheffler: Study of strain and temperature dependence of metal epitaxy. In: Morphological Organization in Epitaxial Growth and Removal. (Hrsg.): Z. Zhang und M.G. Lagally. (Series on directions in condensed matter physics, Vol. 14). World Scientific, Singapore, 3–29 (1998).

Ratsch, C., P. Ruggerone und M. Scheffler: Density-functional theory of surface diffusion and epitaxial growth of metals. In: Surface Diffusion: Atomistic and Collective Processes. (Hrsg.): M.C. Tringides. (NATO ASI Series B: Physics, Vol. 360). Springer, Berlin, 83–101 (1997).

Ruggerone, P., C. Ratsch und M. Scheffler: Density-functional theory of epitaxial growth of metals. In: Growth and properties of ultrathin epitaxial layers. (Hrsg.): D.A. King und D.P. Woodruff. (The chemical physics of solid surfaces, Vol. 8). Elsevier, Amsterdam, 490–544 (1997).

Scheffler, M., V. Fiorentini und S. Oppo: Homoepitaxial growth of metals and the role of surfactants. In: Surface science: principles and current applications ; [based on invited lectures presented ... at the German-Australian Workshop on Surface Science held at Schloß Ringberg, Tegernsee, Germany, in January 1994]. (Hrsg.): R.J. MacDonald, E.C. Taglauer, und K.R. Wandelt. Springer, Berlin, 219–231 (1996).

Pankratov, O. und M. Scheffler: Clustering and Correlations on GaAs - Metal Interface. In: Semiconductor Interfaces at the Sub-Nanometer Scale. (Hrsg.): H.W.M. Salemink und M.D. Pashley. (NATO ASI Series E: Applied Sciences, Vol. 243). Springer, Dordrecht, 121–126 (1993).

Scherz, U. und M. Scheffler: Density-functional theory of sp-bonded defects in III/V semiconductors. In: Imperfections in III/V Materials. (Hrsg.): E.R. Weber. (Semiconductors and Semimetals, Vol. 38). Academic Press, Boston, 1–58 (1993).

Scheffler, M. und U. Scherz: Resonant Raman scattering at point defects in GaAs. In: Defects in Semiconductors. (Hrsg.): H.J. von Bardeleben. (Materials Science Forum, Vol. 10-12). Trans Tech Publications Ltd., Switzerland, 353–358 (1986).

Weinert, C.M. und M. Scheffler: Chalcogen and vacancy pairs in silicon: Electronic structure and stabilities. In: Defects in Semiconductors. (Hrsg.): H.J. von Bardeleben. (Materials Science Forum, Vol. 10-12). Trans Tech Publications Ltd., Switzerland, 25–30 (1986).

Scheffler, M. und A.M. Bradshaw: The electronic structure of adsorbed layers. In: Adsorption at Solid Surfaces. (The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Vol. 2). Elsevier, Amsterdam, 165–257 (1983).

Scheffler, M.: Electronic structure of simple deep-level defects in semiconductors. In: Festkörperprobleme. (Hrsg.): P. Grosse. (Festkörperprobleme, Vol. XXII). Vieweg, Braunschweig, 115–148 (1982).

Scheffler, M. und R. Zimmermann (Hrsg.): 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996. World Scientific, Singapore (1996).

Baldauf, C., M. Ropo, V. Blum und M. Scheffler: How mono-valent cations bend peptide turns and a first-principles database of amino acids and dipeptides. In: Proceedings of the International Conference of Computational Methods in Sciences and Engineering 2014: (ICCMSE 2014). (Hrsg.): T.E. Simos, Z. Kalogiratou, und T. Monovasilis. (AIP Conference Proceedings, Vol. 1618). AIP Publishing, Melville, NY, 119–120 (2014).

Mulakaluri, N., R. Pentcheva, W. Moritz, M. Weiland und M. Scheffler: Theoretical evidence of a mixed adsorption mode of water on Fe₃O₄(001). In: Geochimica et Cosmochimica Acta., A913–A913 (2009).

Buecking, N., S. Butscher, M. Richter, C. Weber, S. Declair, M. Woerner, K. Reimann, P. Kratzer, M. Scheffler und A. Knorr: Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases. In: Proceedings of SPIE., 689209 (2008).

Carlsson, J.M. und M. Scheffler: Curvature effects on vacancies in nanotubes. In: Electronic Properties of Novel Nanostructures. (Hrsg.): H. Kuzmany, J. Fink, M. Mehring, und S. Roth. (AIP Conference Proceedings, Vol. 786). American Institute of Physics, Melville, New York, 432–435 (2005).

Pentcheva, R., F. Wagner, W. Moritz und M. Scheffler: Structure, energetics and properties of Fe₃O₄(001) from first principles. In: High Performance Computing in Science and Engineering, Munich 2004. (Hrsg.): S. Wagner, W. Hanke, A. Bode, und F. Durst. Springer, Berlin, 375–381 (2005).

Ratsch, C., A. Fielicke, J. Behler, M. Scheffler, G.von Helden und G. Meijer: Structure determination of small metal clusters by density-functional theory and comparison with experimental far-infrared spectra. In: Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show. (Nanotech 2005, Vol. 2)., 1–4 (2005).

Santoprete, R., B. Koiller, R.B. Capaz, P. Kratzer und M. Scheffler: Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Hrsg.): J. Menendez und C.G. Van de Walle. (AIP Conference Proceedings, Vol. 772). American Institute of Physics, USA, 745–746 (2005).

Wu, H., P. Kratzer und M. Scheffler: Ab initio study of transition-metal silicide films on Si(001). In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Hrsg.): J. Menendez und C.G. Van de Walle. (AIP Conference Proceedings, Vol. 772). American Institute of Physics, USA, 311–312 (2005).

Scheffler, M., P. Kratzer und L.G. Wang: Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots. In: Proceedings of the 4th Symposium on Atom-Scale Surface and Interface Dynamics., 3–7 (2000).