Publikationen von Matthias Scheffler
Alle Typen
Zeitschriftenartikel (605)
1985
Zeitschriftenartikel
M. Scheffler und W. Berndt: The adsorption of sulphur on Pd(111). I: A LEED analysis of the (sqrt{2} x sqrt{3}) R 30° adsorbate structure. Surface scienc 160 (2), 467–474 (1985).
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Zeitschriftenartikel
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Zeitschriftenartikel
Scheffler, M., , , , und : Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials 14a, 45–58 (1985).
Zeitschriftenartikel
Scheffler, M., und : Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B 31, 6541–6551 (1985).
1984
Zeitschriftenartikel
M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111). Physical Review B 29, 692–702 (1984).
und
Zeitschriftenartikel
M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 52, 851–854 (1984).
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Zeitschriftenartikel
Scheffler, M., , und : Electronic structure and identification of deep defects in GaP. Physical Review B 29, 3269–3282 (1984).
1983
Zeitschriftenartikel
M. Scheffler und : Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 116, 18–27 (1983).
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Zeitschriftenartikel
M. Scheffler und : Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 117/118, 137–139 (1983).
, 1982
Zeitschriftenartikel
M. Scheffler: Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 26 (10), 5706–5715 (1982).
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Zeitschriftenartikel
Scheffler, M., und : Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, 1765–1768 (1982).
Zeitschriftenartikel
M. Scheffler: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, L645–L650 (1982).
und 1981
Zeitschriftenartikel
Scheffler, M., , und : Identification and properties of native defects in GaP. Physical Review Letters 47, 413 (1981).
1980
Zeitschriftenartikel
M. Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci., im Druck.
und 1979
Zeitschriftenartikel
Bradshaw, A.M. und M. Scheffler: Lateral interactions in adsorbed layers. J. Vac. Sci. Tech. 16, 447–454 (1979).
Zeitschriftenartikel
K. Horn, K. Jacobi, A.M. Bradshaw, und M. Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), 327 (1979).
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Zeitschriftenartikel
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Zeitschriftenartikel
Scheffler, M.: The influence of lateral interactions on the vibrational spectrum of adsorbed CO. Surface Science 81, 562–570 (1979).
Zeitschriftenartikel
Scheffler, M., K. Horn, A.M. Bradshaw und K. Kambe: Angular-resolved photoemission from physisorbed xenon. Surface science 80, 69–77 (1979).
1978
Zeitschriftenartikel
Horn, K., M. Scheffler und A.M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), 822–825 (1978).