Publikationen von Matthias Scheffler

Máca, F., M. Scheffler und W. Berndt: The adsorption of sulphur on Pd(111). I: A LEED analysis of the (sqrt{2} x sqrt{3}) R 30° adsorbate structure. Surface scienc 160 (2), 467–474 (1985).

Meyer, B.K., J.-M. Spaeth und M. Scheffler: As_Ga-induced dichroism in GaAs. Physical Review Letters 54, 1333–1333 (1985).

Scheffler, M., F. Beeler, O. Jepsen, O. Gunnarsson, O.K. Andersen und G.B. Bachelet: Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials 14a, 45–58 (1985).

Scheffler, M., J.P. Vigneron und G.B. Bachelet: Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B 31, 6541–6551 (1985).

Hora, R. und M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111). Physical Review B 29, 692–702 (1984).

Meyer, B.K., J.-M. Spaeth und M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 52, 851–854 (1984).

Scheffler, M., J. Bernholc, N.O. Lipari und S.T. Pantelides: Electronic structure and identification of deep defects in GaP. Physical Review B 29, 3269–3282 (1984).

Pantelides, S.T., I. Ivanov, M. Scheffler und J.P. Vigneron: Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 116, 18–27 (1983).

Vigneron, J.P., M. Scheffler und S.T. Pantelides: Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 117/118, 137–139 (1983).

Bernholc, J., N.O. Lipari, S.T. Pantelides und M. Scheffler: Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 26 (10), 5706–5715 (1982).

Scheffler, M., J.P. Vigneron und G.B. Bachelet: Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, 1765–1768 (1982).

Schirmer, O. und M. Scheffler: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, L645–L650 (1982).

Scheffler, M., S.T. Pantelides, N.O. Lipari und J. Bernholc: Identification and properties of native defects in GaP. Physical Review Letters 47, 413 (1981).

Hora, R. und M. Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci., im Druck.

Bradshaw, A.M. und M. Scheffler: Lateral interactions in adsorbed layers. J. Vac. Sci. Tech. 16, 447–454 (1979).

Hoffmann, P., C.v. Muschwitz, K. Horn, K. Jacobi, A.M. Bradshaw, K. Kambe und M. Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), 327 (1979).

Kambe, K. und M. Scheffler: Theory of photoexcitation of adsorbates. Surface science 89, 262 (1979).

Scheffler, M.: The influence of lateral interactions on the vibrational spectrum of adsorbed CO. Surface Science 81, 562–570 (1979).

Scheffler, M., K. Horn, A.M. Bradshaw und K. Kambe: Angular-resolved photoemission from physisorbed xenon. Surface science 80, 69–77 (1979).

Horn, K., M. Scheffler und A.M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), 822–825 (1978).