Publikationen von M. Scheffler

Zeitschriftenartikel (605)

1988
Zeitschriftenartikel
Dabrowski, J. und M. Scheffler: The EL2 defect in GaAs. Proc. 8th Int. School on Defects in Crystals 425–430 (1988).
Zeitschriftenartikel
Dabrowski, J. und M. Scheffler: Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2. Physical Review Letters 60, 2183–2186 (1988).
Zeitschriftenartikel
Máca, F. und M. Scheffler: Calculation of electronic structure for a crystal surface or interface. Proc. 4th Symposium on Surface Physics 221–224 (1988).
Zeitschriftenartikel
Máca, F. und M. Scheffler: Surface Green's function for a rumpled crystal surface. Comput. Phys. Commun. 51, 381–390 (1988).
Zeitschriftenartikel
Said, M., F. Máca, K. Kambe, M. Scheffler und N.E. Christensen: Electronic structure of fcc and bcc close-packed silver surfaces. Physical Review B 38, 8505–8507 (1988).
Zeitschriftenartikel
Scheffler, M.: Thermodynamic aspects of bulk and surface defects - first-principle calculations. Physics of Solid Surfaces 1987 4, 115–122 (1988).
Zeitschriftenartikel
Scheffler, M. und J. Dabrowski: Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors. Philosophical Magazine A 58 (1), 107–121 (1988).
Zeitschriftenartikel
Weinert, C.M., F. Beeler und M. Scheffler: Total-energy calculation for isolated oxygen impurities in silicon. J. Phys. C 21, 841–846 (1988).
1987
Zeitschriftenartikel
Beeler, F., O.K. Andersen und M. Scheffler: Electronic structure calculation of 3d and 4d transition metal point defects in silicon. Proc. 18th Int. Conf. on the Physics of Semiconductors 875–878 (1987).
Zeitschriftenartikel
Beeler, F., O. Jepsen, O.K. Andersen, O. Gunnarsson und M. Scheffler: Electronic structure calculation of point defects in silicon. Comput. Phys. Comm. 44, 297–305 (1987).
Zeitschriftenartikel
Máca, F. und M. Scheffler: A new version of the program for the calculation of the Green's function for a crystal surface or interface. Comput. Phys. Comm. 47, 349–350 (1987).
Zeitschriftenartikel
Scheffler, M.: Lattice relaxations at substitutional impurities in semiconductors. Physica B/C 146, 176–186 (1987).
Zeitschriftenartikel
Scheffler, M., F. Beeler, O.K. Andersen, O. Gunnarsson und O. Jepsen: Parameter-free total-energy and force calculations for defects in semiconductors. Proc. 7th Int. School Defects in Crystals 3–22 (1987).
Zeitschriftenartikel
Weinert, C.M. und M. Scheffler: Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon. Physical Review Letters 58, 1456–1459 (1987).
1985
Zeitschriftenartikel
Bachelet, G.B. und M. Scheffler: No large lattice relaxations around the arsenic antisite in GaAs. Proc. 17th Int. Conf. on the Physics of Semiconductors 755–760 (1985).
Zeitschriftenartikel
Beeler, F., O.K. Andersen und M. Scheffler: Electronic structure calculation of 3d-transition metal point defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors 129 (1985).
Zeitschriftenartikel
Beeler, F., O.K. Andersen und M. Scheffler: Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon. Physical Review Letters 55, 1498–1501 (1985).
Zeitschriftenartikel
Beeler, F., M. Scheffler, O. Jepsen und O. Gunnarsson: Identifiaction of chalcogen defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors 46, 117 (1985).
Zeitschriftenartikel
Beeler, F., M. Scheffler, O. Jepsen und O. Gunnarsson: Identification of chalcogen point-defects sites in silicon by total-energy calculations. Physical Review Letters 54, 2525–2528 (1985).
Zeitschriftenartikel
Máca, F. und M. Scheffler: Calculation of the Green's function for a crystal surface or interface. Comput. Phys. Commun. 38, 403–413 (1985).
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