Publikationen von Peter Kratzer

Wang, L.G., P. Kratzer und M. Scheffler: Energetics of InAs Thin Films and Islands on the GaAs(001) Substrate. Japanese Journal of Applied Physics 39 (7B), 4298–4301 (2000).

Kratzer, P., C.G. Morgan und M. Scheffler: Model for nucleation in GaAs homoepitaxy derived from first principles. Physical Review B 59 (23), 15246–15252 (1999).

LaBella, V.P., H. Yang, D.W. Bullock, P.M. Thibado, P. Kratzer und M. Scheffler: Atomic structure of the GaAs(001)-(2x4) surface resolved using scanning tunneling microscopy and first-principles theory. Physical Review Letters 83 (15), 2989–2992 (1999).

Morgan, C.G., P. Kratzer und M. Scheffler: Arsenic dimer dynamics during MBE growth: Theoretical evidence for a novel chemisorption state of As_2 molecules on GaAs surfaces. Physical Review Letters 82 (24), 4886–4889 (1999).

Pehlke, E. und P. Kratzer: Density-functional study of hydrogen chemisorption on vicinal Si(001) surfaces. Physical Review B 59 (4), 2790–2800 (1999).

Penev, E., P. Kratzer und M. Scheffler: Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001). Journal of Chemical Physics 110 (8), 3986–3994 (1999).

Wang, L.G., P. Kratzer, M. Scheffler und N. Moll: Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy. Physical Review Letters 82 (20), 4042–4045 (1999).

Kratzer, P.: The dynamics of the H + D/Si(001) reaction: a trajectory study based on ab initio potentials. Chemical Physics Letters 288 (2-4), 396–402 (1998).

Kratzer, P., C.G. Morgan und M. Scheffler: Density-functional theory studies on microscopic processes of GaAs growth. Progress in Surface Science 59 (1-4), 135–147 (1998).

Kratzer, P., E. Pehlke, M. Scheffler, M.B. Raschke und U. Höfer: Highly site-specific H₂ adsorption on vicinal Si(001) surfaces. Physical Review Letters 81 (25), 5596–5599 (1998).

Kunert, R., E. Schöll, T. Hammerschmidt und P. Kratzer: Strain field calculations of quantum dots - a comparison study of two methods. In: Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. (Hrsg.): W. Jantsch und F. Schäffler. (AIP Conference Proceedings, Vol. 893). Springer, Berlin, 73–74 (2007).

Kratzer, P.: Atomistic simulations of processes at surfaces. In: Predictive Simulation of Semiconductor Processing: Status and Challenges. (Hrsg.): J. Dabrowski und E.R. Weber. (Springer Series in Materials Science, Vol. 72). Springer, Berlin, 39–72 (2004).

Scheffler, M. und P. Kratzer: Ab inito thermodynamics and statistical mechanics of diffusion, growth, and self-assembly of quantum dots. In: Atomistic Aspects of Epitaxial Growth. (Hrsg.): M. Kotrla, N.I. Papanicolaou, D.D. Vvedensky, und L.T. Wille. (NATO Science Series II: Mathematics, Physics and Chemistry, Vol. 65). Kluwer, The Netherlands, 355–369 (2002).

Hammerschmidt, T. und P. Kratzer: Role of strain relaxation during different stages of InAs quantum dot growth. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Hrsg.): J. Menendez und C.G. Van de Walle. (AIP Conference Proceedings, Vol. 772). American Institute of Physics, USA, 601–602 (2005).

Penev, E. und P. Kratzer: First-principles study of InAs/GaAs(001) heteroepitaxy. In: Quantum Dots: Fundamentals, Applications,and Frontiers: proceedings of the NATO ARW on Quantum Dots ; Amoudara, Crete, Greece from 20 to 24 July 2003. (Hrsg.): B. Joyce, P. Kelires, A. Naumovets, und D. Vvedensky. (NATO Science Series II: Mathematics, Physics and Chemistry, Vol. 190). Springer, The Netherlands, 27–42 (2005).

Santoprete, R., B. Koiller, R.B. Capaz, P. Kratzer und M. Scheffler: Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Hrsg.): J. Menendez und C.G. Van de Walle. (AIP Conference Proceedings, Vol. 772). American Institute of Physics, USA, 745–746 (2005).

Wu, H., P. Kratzer und M. Scheffler: Ab initio study of transition-metal silicide films on Si(001). In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Hrsg.): J. Menendez und C.G. Van de Walle. (AIP Conference Proceedings, Vol. 772). American Institute of Physics, USA, 311–312 (2005).

Scheffler, M., P. Kratzer und L.G. Wang: Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots. In: Proceedings of the 4th Symposium on Atom-Scale Surface and Interface Dynamics., 3–7 (2000).