Publications of Peter Kratzer

All genres

Journal Article (50)

2000

Journal Article

Wang, L.G., Peter Kratzer and Matthias Scheffler: Energetics of InAs Thin Films and Islands on the GaAs(001) Substrate.

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1999

Journal Article

Kratzer, Peter, C.G. Morgan and Matthias Scheffler: Model for nucleation in GaAs homoepitaxy derived from first principles.

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Full

Journal Article

LaBella, V.P., H. Yang, D.W. Bullock, P.M. Thibado, Peter Kratzer and Matthias Scheffler: Atomic structure of the GaAs(001)-(2x4) surface resolved using scanning tunneling microscopy and first-principles theory.

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Morgan, C.G., Peter Kratzer and Matthias Scheffler: Arsenic dimer dynamics during MBE growth: Theoretical evidence for a novel chemisorption state of As_2 molecules on GaAs surfaces.

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Full

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Pehlke, Eckard and Peter Kratzer: Density-functional study of hydrogen chemisorption on vicinal Si(001) surfaces.

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Full

Journal Article

Penev, Evgeni, Peter Kratzer and Matthias Scheffler: Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001).

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Full

Journal Article

Wang, L.G., Peter Kratzer, Matthias Scheffler and Nikolaj Moll: Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy.

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publisher-version

1998

Journal Article

Kratzer, Peter: The dynamics of the H + D/Si(001) reaction: a trajectory study based on ab initio potentials.

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Journal Article

Kratzer, Peter, C.G. Morgan and Matthias Scheffler: Density-functional theory studies on microscopic processes of GaAs growth.

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Journal Article

Kratzer, Peter, Eckard Pehlke, Matthias Scheffler, M.B. Raschke and U. Höfer: Highly site-specific H₂ adsorption on vicinal Si(001) surfaces.

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Book Chapter (3)

2007

Book Chapter

Kunert, R., E. Schöll, Thomas Hammerschmidt and Peter Kratzer: Strain field calculations of quantum dots - a comparison study of two methods.

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2004

Book Chapter

Kratzer, Peter: Atomistic simulations of processes at surfaces.

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2002

Book Chapter

Scheffler, Matthias and Peter Kratzer: Ab inito thermodynamics and statistical mechanics of diffusion, growth, and self-assembly of quantum dots.

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Conference Paper (5)

2005

Conference Paper

Hammerschmidt, Thomas and Peter Kratzer: Role of strain relaxation during different stages of InAs quantum dot growth.

(27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, Jul 2004).

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Conference Paper

Penev, Evgeni and Peter Kratzer: First-principles study of InAs/GaAs(001) heteroepitaxy.

(NATO ARW on "Quantum Dots: Fundamentals, Applications and Frontiers", Amoudara, Crete, Greece, Jun 2003).

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Conference Paper

Santoprete, R., B. Koiller, R.B. Capaz, Peter Kratzer and Matthias Scheffler: Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study.

(27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, Jul 2004).

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Conference Paper

Wu, Hua, Peter Kratzer and Matthias Scheffler: Ab initio study of transition-metal silicide films on Si(001).

(27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, Jul 2004).

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2000

Conference Paper

Scheffler, Matthias, Peter Kratzer and Ligen G. Wang: Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots.

(4th Symposium on Atomic-scale Surface and Interface Dynamics, Tsukuba, Japan, Mar 2000).

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