Publications of Eckard Pehlke

All genres

Journal Article (12)

1999

Journal Article

Pehlke, Eckard and Peter Kratzer: Density-functional study of hydrogen chemisorption on vicinal Si(001) surfaces.

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Full

1998

Journal Article

Fuchs, Martin, Michel Bockstedte, Eckard Pehlke and Matthias Scheffler: Pseudopotential study of binding properties of solids within generalized gradient approximations: The role of core-valence exchange correlation.

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DOI

pre-print

1997

Journal Article

Pehlke, Eckard, Nikolaj Moll, Alexander Kley and Matthias Scheffler: Shape and stability of quantum dots.

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DOI

1996

Journal Article

Moll, Nikolaj, Alexander Kley, Eckard Pehlke and Matthias Scheffler: GaAs equilibrium crystal shape from first-principles.

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DOI

1995

Journal Article

Moll, Nikolaj, Michel Bockstedte, Martin Fuchs, Eckard Pehlke and Matthias Scheffler: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge.

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Journal Article

Pehlke, Eckard and M. Scheffler: Hydrogen adsorption on and desorption from Si(001).

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Journal Article

Pehlke, Eckard and Matthias Scheffler: Theory of adsorption and desorption of H_2/Si(001).

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1994

Journal Article

Dabrowski, J., Eckard Pehlke and Matthias Scheffler: Relation between the atomic structure and the surface-stress anisotropy: Calculations for the clean Si(001) surface.

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DOI

Journal Article

Dabrowski, J., Eckard Pehlke and Matthias Scheffler: Calculation of the surface stress anisotropy for the buckled Si(001)(1x2) and p(2x2) surfaces.

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DOI

Journal Article

Mukherjee, S., Eckard Pehlke and J. Tersoff: Calculation of temperature effects on the equilibrium crystal shape of Si near (100).

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DOI

1993

Journal Article

Pehlke, Eckard and Matthias Scheffler: Evidence for site-sensitive screening of core holes at the Si and Ge(001) surface.

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DOI

Journal Article

Tersoff, J. and Eckard Pehlke: Equilibrium crystal shape of silicon near (001).

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DOI

Conference Paper (4)

1997

Conference Paper

Pehlke, Eckard, Nikolaj Moll and Matthias Scheffler: The equilibrium shape of quantum dots.

(VI Italian-Swiss Workshop on, S. Margherita di Pula, (Cagliari), Sep 1996).

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1996

Conference Paper

Pehlke, E.: Surface stress and the mesoscopic structure of solid surfaces.

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Conference Paper

Pehlke, Eckard, Nikolaj Moll and Matthias Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate.

(International Conference on the Physics of Semiconductors, Berlin, Germany, Jul 1996).

MPG.PuRe

pre-print

1992

Conference Paper

Dabrowski, J., Eckhard Pehlke and Matthias Scheffler: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces.

(21st International Conference on the Physics of Semiconductors (ICPS-21), Beijing, China, Aug 1992).

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