Publications of Evgeni Penev

Journal Article (7)

2004
Journal Article
Penev, Evgeni, Peter Kratzer and Matthias Scheffler: Atomic structure of the GaAs(001)-c(4 x 4) surface: first-principles evidence for diversity of heterodimer motifs.
Journal Article
Penev, Evgeni, Sladana Stojkovic, Peter Kratzer and Matthias Scheffler: Anisotropic diffusion of In adatoms on pseudomorphic InxGa1-xAs(001) films: First-principles total energy calculations.
2003
Journal Article
Kratzer, Peter, Evgeni Penev and Matthias Scheffler: Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations.
2002
Journal Article
Kratzer, Peter, Evgeni Penev and Matthias Scheffler: First-principles studies of kinetics in epitaxial growth of III-V semiconductors.
2001
Journal Article
Healy, S.B., C. Filippi, Peter Kratzer, Evgeni Penev and Matthias Scheffler: The role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study.
Journal Article
Penev, Evgeni, Peter Kratzer and Matthias Scheffler: Effect of strain on surface diffusion in semiconductor heteroepitaxy.
1999
Journal Article
Penev, Evgeni, Peter Kratzer and Matthias Scheffler: Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001).

Conference Paper (1)

2005
Conference Paper
Penev, Evgeni and Peter Kratzer: First-principles study of InAs/GaAs(001) heteroepitaxy.
(NATO ARW on "Quantum Dots: Fundamentals, Applications and Frontiers", Amoudara, Crete, Greece, Jun 2003).

Thesis - PhD (1)

2002
Thesis - PhD
Penev, Evgeni: On the theory of surface diffusion in InAs/GaAs(001) heteroepitaxy.
Go to Editor View