Publications of Jörg Neugebauer

Journal Article

Grosse, F. and Jörg Neugebauer: Limits and accuracy of valence force field models for In_xGa_1-xN alloys.

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Journal Article

Lee, C.D., R.M. Feenstra, Andreia Luisa da Rosa, Jörg Neugebauer and J.E. Northrup: Silicon on GaN(0001) and (0001) surfaces.

MPG.PuRe

Journal Article

Neugebauer, Jörg: Ab initio analysis of surface structure and adatom kinetics of group-III nitrides.

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Journal Article

Van de Walle, Chris G., Sukit Limpijumnong and Jörg Neugebauer: First-principles studies of beryllium doping of GaN.

MPG.PuRe

2000

Journal Article

Chen, H., R.M. Feenstra, J. Northrup, Tosja K. Zywietz, Jörg Neugebauer and D.W. Greve: Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy.

MPG.PuRe

Journal Article

Chen, H., R.M. Feenstra, J.E. Northrup, Tosja K. Zywietz, Jörg Neugebauer and D.W. Greve: Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces.

MPG.PuRe

Journal Article

Ebert, Ph., K. Urban, Lucia Aballe, Chia-Hao Chen, Karsten Horn, Günther Schwarz, Jörg Neugebauer and Matthias Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110).

MPG.PuRe

Journal Article

Feenstra, R.M., H. Chen, V. Ramachandran, C.D. Lee, A.R. Smith, J.E. Northrup, Tosja K. Zywietz, Jörg Neugebauer and D.W. Greve: Surface morphology of GaN surfaces during molecular beam epitaxy.

MPG.PuRe

Journal Article

Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler and J. Northrup: Theory of surfaces and interfaces of group-III nitrides.

MPG.PuRe

Journal Article

Northrup, J., Jörg Neugebauer, R.M. Feenstra and A.R. Smith: Structure of GaN(0001): The laterally contracted Ga bilayer model.

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Journal Article

Van de Walle, Chris G. and Jörg Neugebauer: Arsenic impurities in GaN.

MPG.PuRe

1999

Journal Article

Northrup, J.E. and Jörg Neugebauer: Indium induced changes in GaN(0001) surface morphology.

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Journal Article

Northrup, J.E., L.T. Romano and Jörg Neugebauer: Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys.

MPG.PuRe

Journal Article

Smith, A.R., R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, Jörg Neugebauer and J.E. Northrup: GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations.

MPG.PuRe

Journal Article

Stampfl, Catherine, Jörg Neugebauer and Chris G. Van de Walle: Doping of Al_xGa_1-xN alloys.

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Journal Article

Van de Walle, Chris G. and Jörg Neugebauer: New insights in doping of III-nitrides and their alloys.

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Journal Article

Van de Walle, Chris G., Jörg Neugebauer, Catherine Stampfl, M.D. McCluskey and N.M. Johnson: Defects and Defect Reactions in Semiconductor Nitrides.

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Journal Article

Van de Walle, Chris G., Catherine Stampfl, Jörg Neugebauer, M.D. McCluskey and N.M. Johnson: Doping of AlGaN alloys.

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Journal Article

Zywietz, Tosja K., Jörg Neugebauer and Matthias Scheffler: The adsorption of oxygen at GaN surfaces.

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