Publications of Jörg Neugebauer

Journal Article (65)

1993
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Mechanisms of island formation of alkali-metal adsorbates on Al(111).
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Journal Article
Scheffler, Matthias, Jörg Neugebauer and Roland Stumpf: A step from surface fiction towards surface science.
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Journal Article
Wenzien, Bernd, Jörg Bormet, Jörg Neugebauer and Matthias Scheffler: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites.
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1992
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111).
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1991
Journal Article
Schmalz, A., S. Aminpirooz, L. Becker, J. Haase, Jörg Neugebauer, Matthias Scheffler, D.R. Batchelor, D.L. Adams and E. Bogh: Unusual chemisorption geometry of Na on Al(111).
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Book (1)

2002
Book
Northrup, J.E., J. Neugebauer, D.C. Look, S.F. Chichibu and H. Riechert (Eds.):: GaN and related alloys—2001.
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Book Chapter (9)

2003
Book Chapter
Neugebauer, Jörg: Surface structure and adatom kinetics of group-III nitrides.
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2001
Book Chapter
Limpijumnong, Sukit, Chris G. Van de Walle and Jörg Neugebauer: Stability, diffusion, and complex formation of beryllium in wurtzite GaN.
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Book Chapter
Schwarz, Günther, Jörg Neugebauer and Matthias Scheffler: Point defects on III-V semiconductor surfaces.
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2000
Book Chapter
Grosse, Frank and Jörg Neugebauer: Modeling of structural and elastic properties of InxGa1-xN alloys.
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1999
Book Chapter
Neugebauer, Jörg and Chris G. Van de Walle: Theory of hydrogen in GaN.
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Book Chapter
Van de Walle, Chris G., N.M. Johnson and Jörg Neugebauer: Hydrogen and acceptor compensation in GaN.
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Van de Walle, Chris G. and Jörg Neugebauer: Yellow luminescence in GaN.
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Van de Walle, Chris G., Jörg Neugebauer and Catherine Stampfl: Native defects, impurities, and doping in GaN and related compounds: general remarks.
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Book Chapter
Van de Walle, Chris G., Jörg Neugebauer and Catherine Stampfl: Native point defects in GaN and related compounds.
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Conference Paper (6)

2003
Conference Paper
Lee, C.D., Randall M. Feenstra, John E. Northrup, Liverios Lymperakis and Jörg Neugebauer: Morphology and surface reconstructions of m-plane GaN.
(MRS Fall Meeting: Symposium L – GaN and Related Alloys).
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2002
Conference Paper
Van de Walle, Chris G., John E. Northrup and Jörg Neugebauer: Effects on stoichiometry on point defects and impurities in gallium nitride.
(4th Symposium on Non-Stoichiometric III-V Compounds, Asilomar, CA, U.S.A., Oct 2002).
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1999
Conference Paper
Grosse, F., Jörg Neugebauer and Matthias Scheffler: Phase stability and segregation of In_xGa_1-xN alloys.
(International Conference on the Physics of Semiconductors 1999, Jerusalem, Aug 1998).
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Conference Paper
Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler and J.E. Northrup: Surfaces and growth of group-III nitrides.
(24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, Aug 1998).
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1997
Conference Paper
Van de Walle, Chris G. and Jörg Neugebauer: Theory of point defects and interfaces.
(Symposium N – III-V Nitrides).
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