Publications of Jörg Neugebauer
All genres
Journal Article (65)
2017
Journal Article
, Ali Zendegani, , , , , , , , , , , Fritz Körmann, Jörg Neugebauer, Tilmann Hickel and Beatriz Roldan Cuenya: Operando Phonon Studies of the Protonation Mechanism in Highly Active Hydrogen Evolution Reaction Pentlandite Catalysts.
2005
Journal Article
Ireta, Joel, Jörg Neugebauer, Matthias Scheffler, and : Structural transitions in the polyalanine α-Helix under uniaxial strain.
Journal Article
Ismer, Lars, Joel Ireta, Sixten Boeck and Jörg Neugebauer: Phonon spectra and thermodynamic properties of the infinite polyalanine α helix: A density-functional-theory-based harmonic vibrational analysis.
Journal Article
Rinke, Patrick, Abdallah Qteish, Jörg Neugebauer, Christoph Freysoldt and Matthias Scheffler: Combining GW calculations with exact-exchange density-functional theory: an analysis of valence-band photoemission for compound semiconductors.
2004
Journal Article
Ireta, Joel, Jörg Neugebauer and Matthias Scheffler: On the accuracy of DFT for describing hydrogen bonds: Dependence on the bond directionality.
Journal Article
, , , , Alexey Dick and Jörg Neugebauer: Aspects of spin-polarized scanning tunneling microscopy at the atomic scale: experiment, theory, and simulation.
2003
Journal Article
, , , , Liverios Lymperakis and Jörg Neugebauer: Gallium adsorption on (0001) GaN surfaces.
Journal Article
Ireta, Joel, Jörg Neugebauer, Matthias Scheffler, and : Density functional theory study of the cooperativity of hydrogen bonds in finite and infinite α-helices.
Journal Article
, , , Liverios Lymperakis and Jörg Neugebauer: Morphology and surface reconstructions of GaN(1100) surfaces.
Journal Article
Mandreoli, Lorenzo, Jörg Neugebauer, and : Adatom density kinetic Monte Carlo: A hybrid approach to perform epitaxial growth simulations.
Journal Article
Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler, , and : Adatom kinetics on and below the surface: The existence of a new diffusion channel.
Journal Article
, Jörg Neugebauer and Matthias Scheffler: Al(111)-(√3 x √3)R30: On-top versus substitutional adsorption for Rb and K.
Journal Article
and Jörg Neugebauer: Universal alignment of hydrogen levels in semiconductors, insulators, and solutions.
Journal Article
Van de Walle, Chris G. and Jörg Neugebauer: Structure and energetics of nitride surfaces under MOCVD growth conditions.
2002
Journal Article
, and Jörg Neugebauer: Review of structure of bare and adsorbate-covered GaN(0001) surfaces.
Journal Article
Fuchs, Martin, Juarez Lopes Ferreira Da Silva, Catherine Stampfl, Jörg Neugebauer and Matthias Scheffler: Cohesive properties of group-III nitrides: A comparative study of all-electron and pseudopotential calculations using the generalized gradient approximation.
Journal Article
Rosa, Andreia L., Jörg Neugebauer, , and : Adsorption and incorporation of silicon at GaN(0001) surfaces.
Journal Article
Van de Walle, Chris G. and Jörg Neugebauer: Role of hydrogen in surface reconstructions and growth of GaN.
Journal Article
Van de Walle, Chris G. and Jörg Neugebauer: First-principles surface phase diagram for hydrogen on GaN surfaces.
2001
Journal Article
, , , Jörg Neugebauer and : Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory.