Publications of Jörg Neugebauer
All genres
Journal Article (65)
1993
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Mechanisms of island formation of alkali-metal adsorbates on Al(111).
Journal Article
Scheffler, Matthias, Jörg Neugebauer and Roland Stumpf: A step from surface fiction towards surface science.
Journal Article
Wenzien, Bernd, Jörg Bormet, Jörg Neugebauer and Matthias Scheffler: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites.
1992
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111).
1991
Journal Article
Jörg Neugebauer, Matthias Scheffler, , and : , , , , Unusual chemisorption geometry of Na on Al(111).
Book (1)
2002
Book
, J. Neugebauer, , and (Eds.):: GaN and related alloys—2001.
Book Chapter (9)
2003
Book Chapter
Neugebauer, Jörg: Surface structure and adatom kinetics of group-III nitrides.
2001
Book Chapter
Jörg Neugebauer: , and Stability, diffusion, and complex formation of beryllium in wurtzite GaN.
Book Chapter
Schwarz, Günther, Jörg Neugebauer and Matthias Scheffler: Point defects on III-V semiconductor surfaces.
2000
Book Chapter
Grosse, Frank and Jörg Neugebauer: Modeling of structural and elastic properties of InxGa1-xN alloys.
1999
Book Chapter
Neugebauer, Jörg and Chris G. Van de Walle: Theory of hydrogen in GaN.
Book Chapter
Jörg Neugebauer: , and Hydrogen and acceptor compensation in GaN.
Book Chapter
Jörg Neugebauer: and Yellow luminescence in GaN.
Book Chapter
Jörg Neugebauer and Catherine Stampfl: , Native defects, impurities, and doping in GaN and related compounds: general remarks.
Book Chapter
Jörg Neugebauer and Catherine Stampfl: , Native point defects in GaN and related compounds.
Conference Paper (6)
2003
Conference Paper
Liverios Lymperakis and Jörg Neugebauer: , , , Morphology and surface reconstructions of m-plane GaN.
(MRS Fall Meeting: Symposium L – GaN and Related Alloys).
2002
Conference Paper
Jörg Neugebauer: , and Effects on stoichiometry on point defects and impurities in gallium nitride.
(4th Symposium on Non-Stoichiometric III-V Compounds, Asilomar, CA, U.S.A., Oct 2002).
1999
Conference Paper
Grosse, F., Jörg Neugebauer and Matthias Scheffler: Phase stability and segregation of In_xGa_1-xN alloys.
(International Conference on the Physics of Semiconductors 1999, Jerusalem, Aug 1998).
Conference Paper
Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler and : Surfaces and growth of group-III nitrides.
(24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, Aug 1998).
1997
Conference Paper