Publications of Tosja K. Zywietz
All genres
Journal Article (10)
2003
Journal Article
Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler, , and : Adatom kinetics on and below the surface: The existence of a new diffusion channel.
2000
Journal Article
, , , Tosja K. Zywietz, Jörg Neugebauer and : Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy.
Journal Article
, , , Tosja K. Zywietz, Jörg Neugebauer and : Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces.
Journal Article
, , , , , , Tosja K. Zywietz, Jörg Neugebauer and : Surface morphology of GaN surfaces during molecular beam epitaxy.
Journal Article
Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler and : Theory of surfaces and interfaces of group-III nitrides.
1999
Journal Article
Zywietz, Tosja K., Jörg Neugebauer and Matthias Scheffler: The adsorption of oxygen at GaN surfaces.
1998
Journal Article
Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler, and : Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior.
Journal Article
Zywietz, Tosja K., Jörg Neugebauer and Matthias Scheffler: Adatom diffusion at GaN(0001) and (0001̄) surfaces.
Journal Article
Zywietz, Tosja K., Jörg Neugebauer, Matthias Scheffler and : Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors.
Journal Article
Zywietz, Tosja K., Jörg Neugebauer, Matthias Scheffler, and : Surface structures, surfactants and diffusion at cubic and wurtzite GaN.
Conference Paper (1)
1999
Conference Paper
Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler and : Surfaces and growth of group-III nitrides.
(24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, Aug 1998).
Thesis - PhD (1)
1999
Thesis - PhD
Zywietz, Tosja K.: Dichte-Funktional-Theorie der thermodynamischen und kinetischen Eigenschaften polarer Galliumnitrid-Oberflächen.