Publications of Jens Paggel

Journal Article (8)

1999
Journal Article
Baumgärtel, P., J. Paggel, M. Hasselblatt, K. Horn, V. Fernandez, O. Schaff, J.H. Weaver, A.M. Bradshaw, D.P. Woodruff, E. Rotenberg and J. Denlinger: Structure determination of the (√3×√3)R30° boron phase on the Si(111) surface using photoelectron diffraction. Physical Review B 59 (20), 13014–13019 (1999).
1998
Journal Article
Paggel, J., G. Neuhold, H. Haak and K. Horn: Growth morphology and electronic structure of Na films on Si(111)-(7×7) and Si(111)-Na(3×1). Surface Science 414 (1-2), 221–235 (1998).
1997
Journal Article
Chassé, T., G. Neuhold, J. Paggel and K. Horn: Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects. Applied Surface Science 115 (4), 326–335 (1997).
1996
Journal Article
Neuhold, G., T. Chassé, J. Paggel and K. Horn: Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B 54 (12), 8623–8626 (1996).
1994
Journal Article
Chassé, T., J. Paggel, G. Neuhold, W. Theis and K. Horn: Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science 307-309 (A), 295–302 (1994).
Journal Article
Öfner, H., R. Hofmann, J. Kraft, F.P. Netzer, J. Paggel and K. Horn: Metal-overlayer-induced charge-transfer effects in thin SiO2-Si structures. Physical Review B 50 (20), 15 120–15 126 (1994).
Journal Article
Paggel, J. and M. Förster: An artefact in scanning tunneling microscopy images of highly oriented pyrolytic graphite. Applied Physics A 59, 419–425 (1994).
Journal Article
Paggel, J., W. Theis, K. Horn, C. Jung, C. Hellwig and H. Petersen: Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy. Physical Review B 50 (24), 18 686–18 689 (1994).

Thesis - PhD (1)

1994
Thesis - PhD
Paggel, J.: Elektronische und geometrische Struktur von Metall/Halbleitergrenzflächen: Na/Si(111). Freie Universität Berlin
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