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Brenig, W., A. Groß, U. Höfer, P. Kratzer und R. Russ: Reaction Dynamics of H₂/Si: A 5-D Model. In: Elementary Processes in Excitations and Reactions on Solid Surfaces. (Hrsg.): A. Okiji, H. Kasai, und K. Makoshi. (Springer series in solid-state sciences, Vol. 121). Springer, Berlin, 3–25 (1996).

Groß, A., M. Bockstedte und M. Scheffler: Ab initio Molecular Dynamics Study of D₂ Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Hrsg.): M. Scheffler. World Scientific, Singapore, 951–954 (1996).

Kley, A. und M. Scheffler: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Hrsg.): M. Scheffler., 1031–1034 (1996).

Mattila, T., A.P. Seitsonen und R.M. Nieminen: Ab-initio study of nitrogen antisites in GaN and InN. In: Proceedings of the First Symposium on III-V Nitride Materials and Processes. (Proceedings volume / Electrochemical Society, Vol. 96-11)., 205–211 (1996).

Muhler, M., F. Rosowski, O. Hinrichsen, A. Hornung und G. Ertl: Ruthenium as catalyst for ammonia synthesis. In: Proceedings of the 11th International Congress On Catalysis - 40th Anniversary. (Hrsg.): J.W. Hightower, W.N. Delgass, E. Iglesia, und A.T. Bell. (Studies in Surface Science and Catalysis, Vol. 101). Elsevier, , 317–326 (1996).

Neugebauer, J. und C.G. Van de Walle: Role of defects and impurities in doping of GaN. In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Hrsg.): M. Scheffler. World Scientific, Singapore, 2849–2856 (1996).

Pehlke, E.: Surface stress and the mesoscopic structure of solid surfaces. In: Thermodynamics of Surfaces: Minisymposium, May 11 - 13, 1995. (Hrsg.): W. Muschik und C. Papenfuss. (TUB-Dokumentation Wissenstransfer, Vol. 2). Technische Universität, Berlin, 144–163 (1996).

Pehlke, E., N. Moll und M. Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors. (Hrsg.): R. Zimmermann. World Scientific, Singapore, 1301–1304 (1996).

Allongue, P., V. Kieling und H. Gerischer: Etching mechanism and atomic structure of H–Si(111) surfaces prepared in NH₄F. In: Electrochimica Acta., 1353–1360 (1995).

Ruggerone, P., B. Kohler, S. Wilke und M. Scheffler: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems. (Hrsg.): E. Bertel. World Scientific, Singapore, 113–126 (1995).

Baenitz, M., M. Heinze, K. Lüders, H. Werner und R. Schlögl: Susceptibility Study of Site Selective Doped Fullerenes - K₂RbC₆₀, Rb₃C₆₀, K₂CsC₆₀, and Rb₂CsC₆₀. In: Materials Research Society Symposium Proceedings. Materials Research Society, Pittsburgh, 301–306 (1994).

Heinemann, M. und M. Scheffler: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces. (Hrsg.): B. Lengeler, H. Lüth, W. Mönch, und J. Pollmann. World Scientific, Singapore, 297–300 (1994).

Oppo, S., V. Fiorentini und M. Scheffler: Surface alloying and surfactant action of Sb on Ag(111). In: Materials Research Society Symposium Proceedings. Materials Research Society, New York, 323–328 (1994).

Bosin, A., V. Fiorentini, A. Lastri und G.B. Bachelet: Pseudohamiltonians and Quantum Monte Carlo. In: Materials theory and modelling: symposium. (Hrsg.): J. Broughton. (Materials Research Society symposium proceedings, Vol. 291). Materials Research Soc., New York, 21–26 (1993).

Gerischer, H.: Conditions for an efficient photocatalytic activity of TiO₂ particles. In: Photocatalytic Purification and Treatment of Water and Air. (Hrsg.): D.F. Ollis und H. Al-Ekabi. (Trace Metals in the Environment, Vol. 3). Elsevier Science Publ. B.V., Amsterdam, 1–17 (1993).

Kuhlenbeck, H. und H.-J. Freund: Adsorption and Reaction of Small Molecules on Oxide Surfaces. In: Surface Science, Principles and Applications, Proceedings of the Australian-German Workshop, Sydney, Australia, December 2-5, 1991. (Hrsg.): R.F. Howe, R.N. Lamb, und K. Wandelt. (Springer Proceedings in Physics, Vol. 73)., 227–241 (1993).

Dabrowski, J., E. Pehlke und M. Scheffler: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. (Hrsg.): P. Jiang und H.-Z. Zheng. World Scientific, Singapore, 389–392 (1992).

Gerischer, H.: Is cold fusion a reality? The impressions of a critical observer. In: The Science of Cold Fusion. (Hrsg.): T. Bressani, E. Del Giudice, und G. and Preparata. Società Italiana di Fisica, Editrice Compositori, Bologna, 465–474 (1991).

Gerischer, H.: Electrochemical solar energy conversion. In: Condensed Matter Physics Aspects of Electrochemistry. (Hrsg.): M.P. Tosi und A.A. Kornyshev. World Scientific Publ. Co., Singapore, 489–498 (1991).

Gerischer, H.: The semiconductor–electrolyte interface. In: Condensed Matter Physics Aspects of Electrochemistry. (Hrsg.): M.P. Tosi und A.A. Kornyshev. World Scientific Publ. Co., Singapore, 176–193 (1991).

Gerischer, H.: Electrochemical physics. In: Condensed Matter Physics Aspects of Electrochemistry. (Hrsg.): M.P. Tosi und A.A. Kornyshev. World Scientific Publ. Co., Singapore, 3–6 (1991).

Zeitler, E.: Radiation Damage in Electron Crystallography. In: Electron Crystallography of Organic Molecules. (Hrsg.): J.R. Fryer und D.L. Dorset. (NATO Science Series, Vol. 328). Springer, Dordrecht, 355–360 (1991).

Becker, U.: Correlation satellites in the threshold region. In: AIP Conference Proceedings., 621–633 (1990).

Böttcher, B., U. Lücken, E.J. Boekema und P. Gräber: On the Structure of the ATP-Synthase from Chloroplasts. In: Current Research in Photosynthesis: Proceedings of the VIIIth International Conference on Photosynthesis Stockholm, Sweden, August 6–11, 1989. (Hrsg.): M. Baltscheffsky. Springer, Dordrecht, 1939–1942 (1990).

Engel, W. und H. Sauer: Electron energy-loss near-edge structures as a probe of solids. In: Electron Microscopy 1990: Proceedings of the XIIth International Congress for Electron Microscopy. (Hrsg.): L.D. Peachey und D.B. Williams. San Francisco Press, San Francisco, CA, 70–71 (1990).

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Karge, H.G., V. Mavrodinova, Z. Zheng und H.K. Beyer: Solid-State Ion Exchange - Phenomenon and Mechanism. In: Guidelines for Mastering the Properties of Molecular Sieves. (Hrsg.): D. Barthomeuf, E.G. Derouane, und W. Hölderich. (NATO Science Series: B, Vol. 221). Springer, Boston,MA, 157–168 (1990).

Karge, H.G. und J.B. Nagy: Characterization of Structural and Physico-Chemical Properties of Zeolitic Systems. In: Guidelines for Mastering the Properties of Molecular Sieves: Relationship between the Physicochemical Properties of Zeolitic Systems and Their Low Dimensionality. (Hrsg.): D. Barthomeuf, E.G. Derouane, und W. Hölderich. (NATO ASI Series, Vol. 221). Springer, Boston, MA, 387–394 (1990).

Mull, T., H. Kuhlenbeck, G. Odörfer, R. Jaeger, C. Xu, B. Baumeister, M. Menges, G. Illing, H.-J. Freund, D. Weide und P. Andresen: Adsorption and UV-Laser Desorption of NO/O/Ni(100). In: Desorption Induced by Electronic Transitions DIET IV - Proceedings of the Fourth International Workshop, Gloggnitz, Austria, October 2–4, 1989. (Hrsg.): G. Betz und P. Varga. (Springer Series in Surface Sciences, Vol. 19). Springer, Berlin, 169–173 (1990).

Máca, F., M. Scheffler und W. Berndt: A LEED analysis of sqrt{3} x sqrt{3} S on Pd(111). In: Proc. 3rd Symposium on Surface Physics: Physics of Solid Surfaces. (Hrsg.): J. Koukal., 195–198 (1985).

Bernholc, J., N.O. Lipari, S.T. Pantelides und M. Scheffler: Theory of point defects and deep impurities in semiconductors. In: Defects and Radiation Effects in Semiconductors. (Hrsg.): R.R. Hasiguti. Institute of Physics, London, 1–17 (1981).

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Liu, X.: Machine learning and reaction dynamics: From spectroscopic constants of diatomic molecules to buffer gas chemistry. Freie Universität Berlin

Annies, S.: Meso-scale modeling of the structural, electronic and transport properties governing (dis-)charging processes in lithium intercalated graphite anodes. Technische Universität München

Bi, S.: Self-interaction corrected SCAN functional for molecules and solids in the numeric atom-center orbital framework. Humboldt Universität zu Berlin

Chen, K.: Molecular Machine Learning for Complex Electronic Properties. Technische Universität München

Deimel, M.: Ab Initio Studies of the Activity and Selectivity of Transition Metal Catalysts for CO Hydrogenation. Technische Universität München

Demling, A.: Elementary processes at surfaces and interfaces of electrochemically relevant systems. Humboldt-Universität zu Berlin

Ghan, S.: Electronic Couplings from Density Functional Theory: Quantitative Approaches. Technische Universität München

Greis, K.: Structural Analysis of Glycosyl Cations and Other Intermediates Using Cryogenic Infrared Spectroscopy. Freie Universität Berlin

Gura, L.: High-Speed Scanning Tunneling Microscopy on Thin Oxide Film Systems. Humbold Universität zu Berlin

Herzog, A.: Operando Insights into Size and Shape-controlled Cu-based Nanocatalysts for the Electrochemical Reduction of CO₂ toward C₂₊ products. Technische Universität Berlin

Hofsäss, S.: Laser cooling of atoms and molecules in the deep ultraviolet. Radboud Universiteit Nijmegen

Hu, X.: Metal Cations in Protein Force Fields: From Data Set Creation and Benchmarks to Polarizable Force Field Implementation and Adjustment. Freie Universität Berlin

Kirschbaum, C.: Lipid Fingerprinting by Mass Spectrometry and Laser Light. Freie Universität Berlin

Landini, E.: Machine Learning Based Screening of Double Perovskites for Photovoltaic Applications. Technische Universität München

Langer, M.F.: Machine Learning for Atomistic Modeling: Representations and Thermal Transport. Technische Universität Berlin