Publications of Matthias Scheffler

J. Dabrowski, E. Pehlke and M. Scheffler: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. (Eds.): P. Jiang and H.-Z. Zheng. World Scientific, Singapore, 389–392 (1992).

F. Máca, M. Scheffler and W. Berndt: A LEED analysis of sqrt{3} x sqrt{3} S on Pd(111). In: Proc. 3rd Symposium on Surface Physics: Physics of Solid Surfaces. (Ed.): J. Koukal., 195–198 (1985).

J. Bernholc, N.O. Lipari, S.T. Pantelides and M. Scheffler: Theory of point defects and deep impurities in semiconductors. In: Defects and Radiation Effects in Semiconductors. (Ed.): R.R. Hasiguti. Institute of Physics, London, 1–17 (1981).

M. Scheffler, K. Kambe, F. Forstmann and K. Jacobi: Angle-resolved photoemission of the oxygen overlayer on Ni,(001): Part 1 (Calculations). In: Proceedings of the 7th International Vacuum Congress and the 3rd International Conference on Solid Surfaces of the International Union for Vacuum Science, Technique and Applications. (Ed.): R. Dobrozemsky., 2223–2226 (1977).

M. Scheffler, K. Kambe and F. Forstmann: Energy and angle-resolved photoemission. In: Proceedings International Symposium on Photoemission. (Eds.): R.F. Willis, B. Feuerbacher, B. Fitton, and C. Backx. ESA, Paris, France, 227 (1976).

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