Publications of Matthias Scheffler

Conference Paper (27)

1999
Conference Paper
F. Grosse, J. Neugebauer and M. Scheffler: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>G. David</span></span> World Scientific, Singaporein press
Conference Paper
J. Neugebauer, T.K. Zywietz, M. Scheffler and J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>D. Gershoni</span></span> World Scientific, Singapore, 235–242 (1999).
1997
Conference Paper
A. Groß and M. Scheffler: Steering and Isotope Effects in the Dissociative Adsorption of H2/Pd(100). In: Frontiers in Materials Modelling and Design: Proceedings of the Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20–23 August 1996. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>V. Kumar</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>S. Sengupta</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>B. Raj</span></span> Springer, Berlin, 285–292 (1997).
Conference Paper
E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science. (Eds.): <span style="font-style: normal; font-weight: normal"><a rel="nofollow" class="author_name" href="/publication-search/581889?person=%2Fpersons%2Fresource%2Fpersons21509">V. Fiorentini</a></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>F. Meloni</span></span> (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 23–32 (1997).
Conference Paper
M. Petersen, P. Ruggerone and M. Scheffler: He scattering from metal surfaces. In: Proceedgins VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Ed.): <span style="font-style: normal; font-weight: normal"><a rel="nofollow" class="author_name" href="/publication-search/581889?person=%2Fpersons%2Fresource%2Fpersons21509">V. Fiorentini</a></span> (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 43–52 (1997).
Conference Paper
P. Ruggerone, A. Kley and M. Scheffler: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Ed.): <span style="font-style: normal; font-weight: normal"><a rel="nofollow" class="author_name" href="/publication-search/581889?person=%2Fpersons%2Fresource%2Fpersons21509">V. Fiorentini</a></span> (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 33–42 (1997).
1996
Conference Paper
A. Groß, M. Bockstedte and M. Scheffler: Ab initio Molecular Dynamics Study of D2 Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>M. Scheffler</span></span> World Scientific, Singapore, 951–954 (1996).
Conference Paper
A. Kley and M. Scheffler: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>M. Scheffler</span></span> 1031–1034 (1996).
Conference Paper
E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>R. Zimmermann</span></span> World Scientific, Singapore, 1301–1304 (1996).
1995
Conference Paper
P. Ruggerone, B. Kohler, S. Wilke and M. Scheffler: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>E. Bertel</span></span> World Scientific, Singapore, 113–126 (1995).
1994
Conference Paper
M. Heinemann and M. Scheffler: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>B. Lengeler</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>H. Lüth</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>W. Mönch</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>J. Pollmann</span></span> World Scientific, Singapore, 297–300 (1994).
Conference Paper
S. Oppo, V. Fiorentini and M. Scheffler: Surface alloying and surfactant action of Sb on Ag(111). In: Materials Research Society Symposium Proceedings. Materials Research Society, New York, 323–328 (1994).
1992
Conference Paper
J. Dabrowski, E. Pehlke and M. Scheffler: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>P. Jiang</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>H.-Z. Zheng</span></span> World Scientific, Singapore, 389–392 (1992).
1985
Conference Paper
F. Máca, M. Scheffler and W. Berndt: A LEED analysis of sqrt{3} x sqrt{3} S on Pd(111). In: Proc. 3rd Symposium on Surface Physics: Physics of Solid Surfaces. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>J. Koukal</span></span> 195–198 (1985).
1981
Conference Paper
J. Bernholc, N.O. Lipari, S.T. Pantelides and M. Scheffler: Theory of point defects and deep impurities in semiconductors. In: Defects and Radiation Effects in Semiconductors. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>R.R. Hasiguti</span></span> Institute of Physics, London, 1–17 (1981).
1977
Conference Paper
M. Scheffler, K. Kambe, F. Forstmann and K. Jacobi: Angle-resolved photoemission of the oxygen overlayer on Ni,(001): Part 1 (Calculations). In: Proceedings of the 7th International Vacuum Congress and the 3rd International Conference on Solid Surfaces of the International Union for Vacuum Science, Technique and Applications. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>R. Dobrozemsky</span></span> 2223–2226 (1977).
1976
Conference Paper
M. Scheffler, K. Kambe and F. Forstmann: Energy and angle-resolved photoemission. In: Proceedings International Symposium on Photoemission. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>R.F. Willis</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>B. Feuerbacher</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>B. Fitton</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>C. Backx</span></span> ESA, Paris, France, 227 (1976).

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