Publications of M. Scheffler
All genres
Journal Article (609)
1985
Journal Article
, and M. Scheffler: Electronic structure calculation of 3d-transition metal point defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors 129 (1985).
Journal Article
, and M. Scheffler: Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon. Physical Review Letters 55, 1498–1501 (1985).
Journal Article
, M. Scheffler, and : Identifiaction of chalcogen defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors 46, 117 (1985).
Journal Article
, M. Scheffler, and : Identification of chalcogen point-defects sites in silicon by total-energy calculations. Physical Review Letters 54, 2525–2528 (1985).
Journal Article
and M. Scheffler: Calculation of the Green's function for a crystal surface or interface. Comput. Phys. Commun. 38, 403–413 (1985).
Journal Article
Journal Article
M. Scheffler, , , , and : Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials 14a, 45–58 (1985).
Journal Article
M. Scheffler, and : Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B 31, 6541–6551 (1985).
1984
Journal Article
and M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111). Physical Review B 29, 692–702 (1984).
Journal Article
, and M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 52, 851–854 (1984).
Journal Article
M. Scheffler, , and : Electronic structure and identification of deep defects in GaP. Physical Review B 29, 3269–3282 (1984).
1983
Journal Article
, , M. Scheffler and : Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 116, 18–27 (1983).
Journal Article
, M. Scheffler and : Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 117/118, 137–139 (1983).
1982
Journal Article
, , and M. Scheffler: Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 26 (10), 5706–5715 (1982).
Journal Article
M. Scheffler, and : Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, 1765–1768 (1982).
Journal Article
and M. Scheffler: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, L645–L650 (1982).
1981
Journal Article
M. Scheffler, , and : Identification and properties of native defects in GaP. Physical Review Letters 47, 413 (1981).
1980
Journal Article
and M. Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci., in press.
1979
Journal Article
M. Scheffler, K. Horn, A.M. Bradshaw and K. Kambe: Angular-resolved photoemission from physisorbed xenon. Surface science 80, 69–77 (1979).
Journal Article
A.M. Bradshaw and M. Scheffler: Lateral interactions in adsorbed layers. J. Vac. Sci. Tech. 16, 447–454 (1979).