publication_list1_Roldan

1989

Journal Article

H. Overhof, M. Scheffler and C.M. Weinert: Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon. Mat. Sci. Forum 38-41, 293–298 (1989).

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Journal Article

H. Overhof, M. Scheffler and C.M. Weinert: Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure. Materials Science and Engineering B 4, 315–319 (1989).

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Journal Article

M. Scheffler: Chemical binding, stability and metastability of defects in semiconductors. Festkörperprobleme 29, 231–250 (1989).

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Journal Article

U. Scherz, D. Weider and M. Scheffler: Electronic and vibrational properties of deep centers in semiconductors. Egyp. J. Sol. 12, 1 (1989).

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Journal Article

D. Weider, M. Scheffler and U. Scherz: Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes. Mat. Sci. Forum 38-41, 299–304 (1989).

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1988

Journal Article

J. Dabrowski and M. Scheffler: Ab-initio calculations for native point defects in GaAs. Proc. 5th Conf. on Semi-Insulating III-V Materials 37–42 (1988).

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Journal Article

J. Dabrowski and M. Scheffler: The EL2 defect in GaAs. Proc. 8th Int. School on Defects in Crystals 425–430 (1988).

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Journal Article

J. Dabrowski and M. Scheffler: Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2. Physical Review Letters 60, 2183–2186 (1988).

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Journal Article

F. Máca and M. Scheffler: Calculation of electronic structure for a crystal surface or interface. Proc. 4th Symposium on Surface Physics 221–224 (1988).

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Journal Article

F. Máca and M. Scheffler: Surface Green's function for a rumpled crystal surface. Comput. Phys. Commun. 51, 381–390 (1988).

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Journal Article

M. Said, F. Máca, K. Kambe, M. Scheffler and N.E. Christensen: Electronic structure of fcc and bcc close-packed silver surfaces. Physical Review B 38, 8505–8507 (1988).

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DOI

publisher-version

Journal Article

M. Scheffler: Thermodynamic aspects of bulk and surface defects - first-principle calculations. Physics of Solid Surfaces 1987 4, 115–122 (1988).

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Journal Article

M. Scheffler and J. Dabrowski: Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors. Philosophical Magazine A 58 (1), 107–121 (1988).

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DOI

Journal Article

C.M. Weinert, F. Beeler and M. Scheffler: Total-energy calculation for isolated oxygen impurities in silicon. J. Phys. C 21, 841–846 (1988).

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1987

Journal Article

F. Beeler, O.K. Andersen and M. Scheffler: Electronic structure calculation of 3d and 4d transition metal point defects in silicon. Proc. 18th Int. Conf. on the Physics of Semiconductors 875–878 (1987).

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Journal Article

F. Beeler, O. Jepsen, O.K. Andersen, O. Gunnarsson and M. Scheffler: Electronic structure calculation of point defects in silicon. Comput. Phys. Comm. 44, 297–305 (1987).

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Journal Article

F. Máca and M. Scheffler: A new version of the program for the calculation of the Green's function for a crystal surface or interface. Comput. Phys. Comm. 47, 349–350 (1987).

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Journal Article

M. Scheffler: Lattice relaxations at substitutional impurities in semiconductors. Physica B/C 146, 176–186 (1987).

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Journal Article

M. Scheffler, F. Beeler, O.K. Andersen, O. Gunnarsson and O. Jepsen: Parameter-free total-energy and force calculations for defects in semiconductors. Proc. 7th Int. School Defects in Crystals 3–22 (1987).

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Journal Article

C.M. Weinert and M. Scheffler: Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon. Physical Review Letters 58, 1456–1459 (1987).

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Publications of M. Scheffler

Journal Article (591)