Publications of Matthias Scheffler
All genres
Journal Article (604)
1990
Journal Article
, M. Heinemann and M. Scheffler: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 215–218 (1990).
Journal Article
, M. Heinemann and M. Scheffler: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces. Extended Abstract: Electronic, Optical and Device Properties of Layered Structures 21, 71–75 (1990).
Journal Article
F. Maca, M. Said, K. Kambe and M. Scheffler: Electronic structure and angular resolved photoemission calculations for fcc and bcc silver surfaces. Vacuum 41 (1-3), 538–542 (1990).
Journal Article
, , and M. Scheffler: Electronic Structure and Angular Resolved Photoemission Calculations for fcc and bcc Silver Surfaces. Vacuum 41, 538–542 (1990).
Journal Article
M. Methfessel, and M. Scheffler: The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 989–992 (1990).
Journal Article
, M. Scheffler, , and : Spatial Electron Current Distribution in a Scanning Tunneling Microscope. Vacuum 41, 745–746 (1990).
1989
Journal Article
and M. Scheffler: Calculation of total energies, reaction and diffusion processes of transition-metal point defects in silicon. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19) 983–986 (1989).
Journal Article
and M. Scheffler: Theory of 4d-transition-metal ions in silicon: Total-energies, diffusion, electronic and magnetic properties. Mat. Sci. Forum 38-41, 257–262 (1989).
Journal Article
and M. Scheffler: Negative thermal expansion of diamond and zinc-blende semiconductors. Physical Review Letters 63, 290–293 (1989).
Journal Article
, , and M. Scheffler: Calculated thermodynamic potentials for the vacancy and the oxygen a-center in silicon. Mat. Sci. Forum 38-41, 625–630 (1989).
Journal Article
and M. Scheffler: The As_Ga-As_i pair in GaAs, the arsenic antisite and the properties of EL2. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19) 1023–1026 (1989).
Journal Article
Journal Article
and M. Scheffler: The isolated arsenic antisite defect in GaAs and the properties of EL2. Physical Review B 40, 10391–10401 (1989).
Journal Article
, M. Scheffler and : Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon. Mat. Sci. Forum 38-41, 293–298 (1989).
Journal Article
, M. Scheffler and : Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure. Materials Science and Engineering B 4, 315–319 (1989).
Journal Article
M. Scheffler: Chemical binding, stability and metastability of defects in semiconductors. Festkörperprobleme 29, 231–250 (1989).
Journal Article
, and M. Scheffler: Electronic and vibrational properties of deep centers in semiconductors. Egyp. J. Sol. 12, 1 (1989).
Journal Article
, M. Scheffler and : Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes. Mat. Sci. Forum 38-41, 299–304 (1989).
1988
Journal Article
and M. Scheffler: Ab-initio calculations for native point defects in GaAs. Proc. 5th Conf. on Semi-Insulating III-V Materials 37–42 (1988).
Journal Article
and M. Scheffler: The EL2 defect in GaAs. Proc. 8th Int. School on Defects in Crystals 425–430 (1988).