Publications of Matthias Scheffler
All genres
Journal Article (591)
1992
Journal Article
G. Doyen, D. Drakova, V. Mujica and M. Scheffler: Theory of the scanning tunneling microscope. Physica Status Solidi (A) 131 (1), 107–108 (1992).
Journal Article
J. Hebenstreit and M. Scheffler: Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110). Physical Review B 46 (16), 10134–10145 (1992).
Journal Article
M. Heinemann and M. Scheffler: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science 56-58, 628–631 (1992).
Journal Article
M. Methfessel, D. Hennig and M. Scheffler: Calculated surface energies of the 4d transition metals: A study of bond-cutting models. Applied Physics A 55, 442–448 (1992).
Journal Article
M. Methfessel, D. Hennig and M. Scheffler: Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals. Physical Review B 46 (8), 4816–4829 (1992).
Journal Article
J. Neugebauer and M. Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), 16067–16080 (1992).
Journal Article
C. Stampfl, M. Scheffler, H. Over, , , and : Identification of stable and metastable adsorption sites for K adsorbed on Al(111). Physical Review Letters 69 (10), 1532–1535 (1992).
Journal Article
, A. Fleszar, and M. Scheffler: Self-consistent Green-function method for the calculation of electronic properties of localized defects at surfaces and in the bulk. Journal of Physics: Condensed Matter 4, 2831–2844 (1992).
1991
Journal Article
J.L.A. Alves, J. Hebenstreit and M. Scheffler: Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces. Physical Review B 44 (12), 6188–6198 (1991).
Journal Article
X. Gonze, R. Stumpf and M. Scheffler: Analysis of fully separable potentials. Physical Review B 44, 8503–8513 (1991).
Journal Article
, M. Heinemann and M. Scheffler: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters 67, 1031–1034 (1991).
Journal Article
M. Methfessel, , S. Weber and M. Scheffler: Ab-initio calculation of the effect of d-band occupation on the relaxation of transition metal surfaces. Proc. 75th We-Heraeus-Seminar and 21st Annual Internat. Symposium on Electronic Structure of Solids 174–176 (1991).
Journal Article
M. Methfessel and M. Scheffler: Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces. Physica B 172, 175–183 (1991).
Journal Article
, M. Scheffler and : Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. Physical Review B 43, 12494–12506 (1991).
Journal Article
M. Scheffler, , A. Fleszar, , and G. Barzel: A self-consistent surface-Green-function (SSGF) method. Physica B 172, 143–153 (1991).
Journal Article
, , , , J. Neugebauer, M. Scheffler, , and : Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, 2163–2166 (1991).
1990
Journal Article
, , and M. Scheffler: Anion-antisite-like defects in III-V compounds. Physical Review Letters 65 (16), 2046–2049 (1990).
Journal Article
G. Doyen, E. Koetter, and M. Scheffler: Theory of scanning tunneling microscopy. Applied Physics A 51, 281–288 (1990).
Journal Article
X. Gonze, P. Käckell and M. Scheffler: Ghost states for separable, norm-conserving, ab initio pseudopotentials. Physical Review B 41 (17), 12264–12267 (1990).
Journal Article
, and M. Scheffler: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles. Physical Review B 41, 1603–1624 (1990).