Publications of M. Scheffler
All genres
Journal Article (604)
1993
Journal Article
O. Pankratov and M. Scheffler: Electron correlations on a potassium-covered GaAs(110) surface: ab-initio calculations of the Hubbard correlation energy. Surface Science 287/288 (2), 584–587 (1993).
Journal Article
O. Pankratov and M. Scheffler: Bound bipolaron at the surface: The negative-U behavior of GaAs(110) with adsorbed alkali metals. Physical Review Letters 71 (17), 2797–2800 (1993).
Journal Article
O. Pankratov and M. Scheffler: Hubbard correlations and charge transfer at the GaAs(110) surface with alkali adsorbates. Physical Review Letters 70 (3), 351–354 (1993).
Journal Article
E. Pehlke and M. Scheffler: Evidence for site-sensitive screening of core holes at the Si and Ge(001) surface. Physical Review Letters 71 (14), 2338–2341 (1993).
Journal Article
, M. Methfessel and M. Scheffler: Vacancy-formation energies at the (111) surface and in bulk Al, Cu, Ag, and Rh. Physical Review B 48 (3), 1877–1883 (1993).
Journal Article
M. Scheffler, J. Neugebauer and R. Stumpf: A step from surface fiction towards surface science. Journal of Physics: Condensed Matter 5, A91–A94 (1993).
Journal Article
C. Stampfl, , , , M. Scheffler, H. Over and : The structure of Al(111)-K-(√3 × √3)R30° determined by LEED: stable and metastable adsorption sites. Surface Science 287/288, 418–422 (1993).
Journal Article
B. Wenzien, J. Bormet, J. Neugebauer and M. Scheffler: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites. Surface Science 287/288, 559–563 (1993).
Journal Article
, and M. Scheffler: Pressure dependence of deep levels of the As antisite, the Ga-vacancy-As-interstitial pair, and of the stable and metastable states of EL2. Physical Review B 47 (24), 16624–16627 (1993).
1992
Journal Article
, M. Scheffler, M. Heinemann and : Microscopic Properties of Thin Films: Learning About Point Defects. MRS Bulletin 17, 24–31 (1992).
Journal Article
and M. Scheffler: Self-consistent study of the electronic and structural properties of the clean Si(001) (2x1) surface. Applied Surface Science 56-58, 15–19 (1992).
Journal Article
J. Dabrowski and M. Scheffler: Theory of defect metastabilities in III-V compounds. Physica Scripta T45, 151–153 (1992).
Journal Article
Journal Article
G. Doyen, D. Drakova, V. Mujica and M. Scheffler: Theory of the scanning tunneling microscope. Physica Status Solidi (A) 131 (1), 107–108 (1992).
Journal Article
J. Hebenstreit and M. Scheffler: Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110). Physical Review B 46 (16), 10134–10145 (1992).
Journal Article
M. Heinemann and M. Scheffler: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science 56-58, 628–631 (1992).
Journal Article
M. Methfessel, D. Hennig and M. Scheffler: Calculated surface energies of the 4d transition metals: A study of bond-cutting models. Applied Physics A 55, 442–448 (1992).
Journal Article
M. Methfessel, D. Hennig and M. Scheffler: Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals. Physical Review B 46 (8), 4816–4829 (1992).
Journal Article
J. Neugebauer and M. Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), 16067–16080 (1992).
Journal Article
C. Stampfl, M. Scheffler, H. Over, , , and : Identification of stable and metastable adsorption sites for K adsorbed on Al(111). Physical Review Letters 69 (10), 1532–1535 (1992).