Publications of Matthias Scheffler

Journal Article

A. Groß, C.-M. Wei and M. Scheffler: Poisoning of hydrogen dissociation at Pd(100) by adsorbed sulfur studied by ab initio quantum dynamics and ab initio molecular dynamics. Surface Science 416 (1-2), L1095–L1100 (1998).

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P. Kratzer, C.G. Morgan and M. Scheffler: Density-functional theory studies on microscopic processes of GaAs growth. Progress in Surface Science 59 (1-4), 135–147 (1998).

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P. Kratzer, E. Pehlke, M. Scheffler, M.B. Raschke and U. Höfer: Highly site-specific H₂ adsorption on vicinal Si(001) surfaces. Physical Review Letters 81 (25), 5596–5599 (1998).

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N. Moll, M. Scheffler and E. Pehlke: Influence of surface stress on the equilibrium shape of strained quantum dots. Physical Review B 58 (8), 4566–4571 (1998).

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J. Neugebauer, T.K. Zywietz, M. Scheffler, J.E. Northrup and C.G. Van de Walle: Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior. Physical Review Letters 80 (14), 3097–3100 (1998).

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K. Pohl, J.-H. Cho, K. Terakura, M. Scheffler and E.W. Plummer: Anomalously large thermal expansion at the (0001) surface of beryllium without observable interlayer anharmonicity. Physical Review Letters 80 (13), 2853–2856 (1998).

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C. Ratsch and M. Scheffler: Density-functional theory calculations of hopping rates of surface diffusion. Physical Review B 58 (19), 13163–13166 (1998).

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P. Ruggerone, A. Kley and M. Scheffler: Bridging the length and time scales: from ab initio electronic structure calculations to macroscopic proportions. Comments on Condensed Matter Physics 18, 261–277 (1998).

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G. Schwarz, A. Kley, J. Neugebauer, J. Neugebauer and M. Scheffler: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, 1392–1400 (1998).

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Journal Article

S. Schwegmann, A.P. Seitsonen, V.D. Renzi, H. Dietrich, H. Bludau, M. Gierer, H. Over, K. Jacobi, M. Scheffler and G. Ertl: Oxygen adsorption on the Ru(101¯0) surface: Anomalous coverage dependence. Physical Review B 57 (24), 15487–15495 (1998).

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C. Stampfl, K. Kambe, R. Fasel, P. Aebi and M. Scheffler: Theoretical analysis of the electronic structure of the stable and metastable c(2x2) phases of Na on Al(001): Comparison with angle-resolved ultraviolet photoemission spectra. Physical Review B 57 (24), 15251–15260 (1998).

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C. Stampfl and M. Scheffler: Coadsorption of CO and O on Ru(0001): A structural analysis by density functional theory. Israel Journal of Chemistry 38 (4), 409–414 (1998).

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F. Wagner, T. Laloyaux and M. Scheffler: Errors in Hellmann-Feynman forces due to occupation-number broadening and how they can be corrected. Physical Review B 57 (4), 2102–2107 (1998).

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X.-G. Wang, W. Weiss, S.K. Shaikhutdinov, M. Ritter, M. Petersen, F. Wagner, R. Schlögl and M. Scheffler: The Hematite (α-Fe₂O₃) (0001) Surface: Evidence for Domains of Distinct Chemistry. Physical Review Letters 81 (5), 1038–1041 (1998).

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C.M. Wei, A. Groß and M. Scheffler: Ab initio calculation of the potential energy surface for the dissociation of H₂ on the sulfur-covered Pd(100) surface. Physical Review B 57 (24), 15572–15584 (1998).

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J. Xie and M. Scheffler: Structure and dynamics of Rh surfaces. Physical Review B 57 (8), 4768–4775 (1998).

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T.K. Zywietz, J. Neugebauer and M. Scheffler: Adatom diffusion at GaN(0001) and (0001̄) surfaces. Applied Physics Letters 73 (4), 487–489 (1998).

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T.K. Zywietz, J. Neugebauer, M. Scheffler and J.E. Northrup: Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors. Psi-k Newsletter 29, 112–124 (1998).

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Journal Article

T.K. Zywietz, J. Neugebauer, M. Scheffler, J.E. Northrup and C.G. Van de Walle: Surface structures, surfactants and diffusion at cubic and wurtzite GaN. MRS Internet Journal of Nitride Semiconductor Research 3, e26 (1998).

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