Publications of Matthias Scheffler
All genres
Journal Article (591)
561.
Journal Article
M. Scheffler and W. Berndt: The adsorption of sulphur on Pd(111). I: A LEED analysis of the (sqrt{2} x sqrt{3}) R 30° adsorbate structure. Surface scienc 160 (2), 467–474 (1985).
, 562.
Journal Article
M. Scheffler: No large lattice relaxations around the arsenic antisite in GaAs. Proc. 17th Int. Conf. on the Physics of Semiconductors 755–760 (1985).
and 563.
Journal Article
M. Scheffler: Electronic structure calculation of 3d-transition metal point defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors 129 (1985).
, and 564.
Journal Article
M. Scheffler: Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon. Physical Review Letters 55, 1498–1501 (1985).
, and 565.
Journal Article
M. Scheffler, and : Identifiaction of chalcogen defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors 46, 117 (1985).
, 566.
Journal Article
M. Scheffler, and : Identification of chalcogen point-defects sites in silicon by total-energy calculations. Physical Review Letters 54, 2525–2528 (1985).
, 567.
Journal Article
M. Scheffler: Calculation of the Green's function for a crystal surface or interface. Comput. Phys. Commun. 38, 403–413 (1985).
and 568.
Journal Article
, and
569.
Journal Article
Scheffler, M., , , , and : Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials 14a, 45–58 (1985).
570.
Journal Article
Scheffler, M., and : Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B 31, 6541–6551 (1985).
571.
Journal Article
M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111). Physical Review B 29, 692–702 (1984).
and 572.
Journal Article
M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 52, 851–854 (1984).
, and 573.
Journal Article
Scheffler, M., , and : Electronic structure and identification of deep defects in GaP. Physical Review B 29, 3269–3282 (1984).
574.
Journal Article
M. Scheffler and : Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 116, 18–27 (1983).
, , 575.
Journal Article
M. Scheffler and : Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 117/118, 137–139 (1983).
, 576.
Journal Article
M. Scheffler: Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 26 (10), 5706–5715 (1982).
, , and 577.
Journal Article
Scheffler, M., and : Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, 1765–1768 (1982).
578.
Journal Article
M. Scheffler: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, L645–L650 (1982).
and 579.
Journal Article
Scheffler, M., , and : Identification and properties of native defects in GaP. Physical Review Letters 47, 413 (1981).
580.
Journal Article
M. Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci., in press.
and