Publications of Peter Kratzer

Penev, E., P. Kratzer and M. Scheffler: Atomic structure of the GaAs(001)-c(4 x 4) surface: first-principles evidence for diversity of heterodimer motifs. Physical Review Letters 93 (14), 146102–1-146102–4 (2004).

Márquez, J., P. Kratzer and K. Jacobi: Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface. Journal of Applied Physics 95 (12), 7645–7654 (2004).

Wu, H., M. Hortamani, P. Kratzer and M. Scheffler: First-principles study of ferromagnetism in epitaxial Si-Mn thin films on Si(001). Physical Review Letters 92, 23 (2004).

Penev, E., S. Stojkovic, P. Kratzer and M. Scheffler: Anisotropic diffusion of In adatoms on pseudomorphic In_xGa_1-xAs(001) films: First-principles total energy calculations. Physical Review B 69, 115335–1-115335–10 (2004).

Santoprete, R., B. Koiller, R.B. Capaz, P. Kratzer, Q.K.K. Liu and M. Scheffler: Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots. Physical Review B 68, 235311–1-235311–9 (2003).

Temko, Y., T. Suzuki, P. Kratzer and K. Jacobi: InAs quantum dots grown on the GaAs(113)A and GaAs(-1-1-3)B surfaces: A comparative STM study. Physical Review B 68 (16), 165310–1-165310–12 (2003).

Kratzer, P., E. Penev and M. Scheffler: Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations. Applied Surface Science 216 (1-4), 436–446 (2003).

Geelhaar, L., Y. Temko, J. Márquez, P. Kratzer and K. Jacobi: Surface structure of GaAs(2 5 11). Physical Review B 65 (15), 155308–1-155308–13 (2002).

Filippi, C., S.B. Healy, P. Kratzer, E. Pehlke and M. Scheffler: Quantum Monte Carlo calculations of H₂ dissociation on Si(001). Physical Review Letters 89 (16), 166102 (2002).

Kratzer, P., E. Penev and M. Scheffler: First-principles studies of kinetics in epitaxial growth of III-V semiconductors. Applied Physics A 75, 79–88 (2002).

Kratzer, P. and M. Scheffler: Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors. Physical Review Letters 88 (3), 036102 (2002).

Kratzer, P. and M. Scheffler: Surface Knowledge: Toward a Predictive Theory of Materials. Computing in Science & Engineering 3 (6), 16–25 (2001).

Aballe, L., C. Rogero, P. Kratzer, S. Gokhale and K. Horn: Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111). Physical Review Letters 87 (15), 156801 (2001).

Penev, E., P. Kratzer and M. Scheffler: Effect of strain on surface diffusion in semiconductor heteroepitaxy. Physical Review B 64 (8), 085401 (2001).

Wang, L.G., P. Kratzer, M. Scheffler and Q.K.K. Liu: Island dissolution during capping layer growth interruption. Applied Physics A 73 (2), 161–165 (2001).

Healy, S.B., C. Filippi, P. Kratzer, E. Penev and M. Scheffler: The role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study. Physical Review Letters 87 (01), 016105 (2001).

Geelhaar, L., J. Márquez, P. Kratzer and K. Jacobi: GaAs(2511): A New Stable Surface within the Stereographic Triangle. Physical Review Letters 86 (17), 3815–3818 (2001).

Márquez, J., P. Kratzer, L. Geelhaar, K. Jacobi and M. Scheffler: Atomic structure of the stoichiometric GaAs(114) surface. Physical Review Letters 86 (1), 115–118 (2001).

Wang, L.G., P. Kratzer and M. Scheffler: Energetics of InAs Thin Films and Islands on the GaAs(001) Substrate. Japanese Journal of Applied Physics 39 (7B), 4298–4301 (2000).

LaBella, V.P., D.W. Bullock, Z. Ding, C. Emery, P.M. Thibado, P. Kratzer and M. Scheffler: A novel imaging mechanism to determine the atomic structure of the GaAs(001)-(2x4) surface. Omicron Newsletter 4, 4–5 (2000).