Publications of Jörg Neugebauer

Neugebauer, J.: Ab initio analysis of surface structure and adatom kinetics of group-III nitrides. Physica Status Solidi B 227 (1), 93–114 (2001).

Lee, C.D., R.M. Feenstra, A.L.da Rosa, J. Neugebauer and J.E. Northrup: Silicon on GaN(0001) and (0001) surfaces. Journal of Vacuum Science and Technology B 19 (4), 1619–1625 (2001).

Van de Walle, C.G., S. Limpijumnong and J. Neugebauer: First-principles studies of beryllium doping of GaN. Physical Review B 63 (24), 245205 (2001).

Grosse, F. and J. Neugebauer: Limits and accuracy of valence force field models for In_xGa_1-xN alloys. Physical Review B 63 (08), 085207 (2001).

Chen, H., R.M. Feenstra, J.E. Northrup, J. Neugebauer and D.W. Greve: Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory. MRS Internet Journal of Nitride Semiconductor Research 6 (11), e11 (2001).

Chen, H., R.M. Feenstra, J.E. Northrup, T.K. Zywietz, J. Neugebauer and D.W. Greve: Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces. Physical Review Letters 85 (9), 1902–1905 (2000).

Chen, H., R.M. Feenstra, J. Northrup, T.K. Zywietz, J. Neugebauer and D.W. Greve: Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 18 (4), 2284–2289 (2000).

Ebert, P., K. Urban, L. Aballe, C.-H. Chen, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters 84 (25), 5816–5819 (2000).

Neugebauer, J., T.K. Zywietz, M. Scheffler and J. Northrup: Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, 355–359 (2000).

Northrup, J., J. Neugebauer, R.M. Feenstra and A.R. Smith: Structure of GaN(0001): The laterally contracted Ga bilayer model. Physical Review B 61 (4), 9932–9935 (2000).

Van de Walle, C.G. and J. Neugebauer: Arsenic impurities in GaN. Applied Physics Letters 76 (8), 1009–1011 (2000).

Feenstra, R.M., H. Chen, V. Ramachandran, C.D. Lee, A.R. Smith, J.E. Northrup, T.K. Zywietz, J. Neugebauer and D.W. Greve: Surface morphology of GaN surfaces during molecular beam epitaxy. Surface Review and Letters 7 (5-6), 601–606 (2000).

Van de Walle, C.G., J. Neugebauer, C. Stampfl, M.D. McCluskey and N.M. Johnson: Defects and Defect Reactions in Semiconductor Nitrides. Acta Physica Polonica A 96 (5), 613–627 (1999).

Northrup, J.E. and J. Neugebauer: Indium induced changes in GaN(0001) surface morphology. Physical Review B 60 (12), R8473–R8476 (1999).

Stampfl, C., J. Neugebauer and C.G. Van de Walle: Doping of Al_xGa_1-xN alloys. Materials Science and Engineering B 59 (1-3), 253–257 (1999).

Northrup, J.E., L.T. Romano and J. Neugebauer: Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys. Applied Physics Letters 74 (16), 2319–2322 (1999).

Zywietz, T.K., J. Neugebauer and M. Scheffler: The adsorption of oxygen at GaN surfaces. Applied Physics Letters 74 (12), 1695–1697 (1999).

Smith, A.R., R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer and J.E. Northrup: GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations. Surface Science 423 (1), 70–84 (1999).

Van de Walle, C.G. and J. Neugebauer: New insights in doping of III-nitrides and their alloys. Institute of Physics Conference Series 166, 439 (1999).

Van de Walle, C.G., C. Stampfl, J. Neugebauer, M.D. McCluskey and N.M. Johnson: Doping of AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research 4 (S1), 901–912 (1999).