Publications of Matthias Scheffler

Tatarczyk, K., A. Schindlmayr and M. Scheffler: Exchange-correlation kernels for excited states in solids. Physical Review B 63 (23), 235106–1-235106–7 (2001).

Ganduglia-Pirovano, M.V., M. Scheffler, A. Baraldi, S. Lizzit, G. Comelli, G. Paolucci and R. Rosei: Oxygen induced Rh 3d_5/2 surface core-level shifts on Rh(111). Physical Review B 63 (20), 205415–1-205415–11 (2001).

Lizzit, S., A. Baraldi, A. Groso, K. Reuter, M.V. Ganduglia-Pirovano, C. Stampfl, M. Scheffler, M. Stichler, C. Keller, W. Wurth and D. Menzel: Surface core level shifts of clean and oxygen covered Ru(0001). Physical Review B 63 (20), 205419 (2001).

Feibelman, P.J., B. Hammer, J.K. Norskov, F. Wagner, M. Scheffler, R. Stumpf, R. Watwe and J. Dumesic: The CO/Pt(111) puzzle. The Journal of Physical Chemistry B 105 (18), 4018–4025 (2001).

Márquez, J., P. Kratzer, L. Geelhaar, K. Jacobi and M. Scheffler: Atomic structure of the stoichiometric GaAs(114) surface. Physical Review Letters 86 (1), 115–118 (2001).

Lee, S.-H., W. Moritz and M. Scheffler: GaAs(001) surface under conditions of low As pressure: Evidence for a novel surface geometry. Physical Review Letters 85 (18), 3890–3893 (2000).

Wang, L.G., P. Kratzer and M. Scheffler: Energetics of InAs Thin Films and Islands on the GaAs(001) Substrate. Japanese Journal of Applied Physics 39 (7B), 4298–4301 (2000).

Ebert, P., K. Urban, L. Aballe, C.-H. Chen, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters 84 (25), 5816–5819 (2000).

Fichthorn, K.A. and M. Scheffler: Island nucleation in thin-film epitaxy: A first-principles investigation. Physical Review Letters 84 (23), 5371–5374 (2000).

Neugebauer, J., T.K. Zywietz, M. Scheffler and J. Northrup: Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, 355–359 (2000).

Wang, X.-G., A. Chaka and M. Scheffler: Effect of the environment on alpha-Al_2O_3 (0001) surface structures. Physical Review Letters 84 (16), 3650–3653 (2000).

Petersen, M., F. Wagner, L. Hufnagel, M. Scheffler, P. Blaha and K. Schwarz: Improving the efficiency of FP-LAPW calculations. Computer Physics Communications 126 (3), 294–309 (2000).

Groß, A. and M. Scheffler: Dynamics of hydrogen dissociation at the sulfur-covered Pd(100) surface. Physical Review B 61 (12), 8425–8432 (2000).

Pentcheva, R. and M. Scheffler: Stable and metastable structures of Co on Cu(001): An ab initio study. Physical Review B 61 (3), 2211–2220 (2000).

LaBella, V.P., D.W. Bullock, Z. Ding, C. Emery, P.M. Thibado, P. Kratzer and M. Scheffler: A novel imaging mechanism to determine the atomic structure of the GaAs(001)-(2x4) surface. Omicron Newsletter 4, 4–5 (2000).

Wang, L.G., P. Kratzer, N. Moll and M. Scheffler: Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate. Physical Review B 62, 1897–1904 (2000).

Liu, Q.K.K., N. Moll, M. Scheffler and E. Pehlke: Equilibrium shapes and energies of coherent strained InP islands. Physical Review B 60 (24), 17008–17015 (1999).

Nouvertné, F., U. May, M. Bamming, A. Rampe, U. Korte, G. Güntherodt, R. Pentcheva and M. Scheffler: Atomic exchange processes and bimodal initial growth of Co/Cu(001). Physical Review B 60 (20), 14382–14386 (1999).

Stampfl, C., H.J. Kreuzer, S.H. Payne and M. Scheffler: Challenges in predictive calculations of processes at surfaces: surface thermodynamics and catalytic reactions. Applied Physics A 69 (5), 471–480 (1999).

LaBella, V.P., H. Yang, D.W. Bullock, P.M. Thibado, P. Kratzer and M. Scheffler: Atomic structure of the GaAs(001)-(2x4) surface resolved using scanning tunneling microscopy and first-principles theory. Physical Review Letters 83 (15), 2989–2992 (1999).