Publications of Karsten Horn

Journal Article

K.S. Kim, A.L. Walter, L. Moreschini, T. Seyller, K. Horn, E. Rotenberg and A. Bostwick: Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene. Nature Materials 12 (10), 887–892 (2013).

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Journal Article

A.L. Walter, A. Bostwick, F. Speck, M. Ostler, K.S. Kim, Y.J. Chang, L. Moreschini, D. Innocenti, T. Seyller, K. Horn and E. Rotenberg: Small scale rotational disorder observed in epitaxial graphene on SiC(0001). New Journal of Physics 15 (2), 023019 (2013).

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2012

Journal Article

J. Martínez-Blanco, A. Mascaraque, Y. Dedkov and K. Horn: Ge(001) As a Template for Long-Range Assembly of π-Stacked Coronene Rows. Langmuir 28 (8), 3840–3844 (2012).

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Journal Article

J. Nayak, M. Maniraj , A. Rai , S. Singh , P. Rajput, A. Gloskovskii, J. Zegenhagen , D.L. Schlagel , T.A. Lograsso, K. Horn and S.R. Barman : Bulk Electronic Structure of Quasicrystals. Physical Review Letters 109 (21), 216403 (2012).

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Journal Article

M. Ostler, R.J. Koch, F. Speck, F. Fromm, H. Vita, M. Hundhausen, K. Horn and T. Seyller: Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation. Materials Science Forum 717-720, 649–652 (2012).

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Journal Article

M. Sicot, P. Leicht, A. Zusan, S. Bouvron, O. Zander, M. Weser, Y. Dedkov, K. Horn and M. Fonin: Size-Selected Epitaxial Nanoislands Underneath Graphene Moiré on Rh(111). ACS nano 6 (1), 151–158 (2012).

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2011

Journal Article

A. Bostwick, J.L. McChesney, T. Ohta, K.V. Emtsev, T. Seyller, K. Horn and E. Rotenberg: The interaction of Xe and Xe + K with graphene. Journal of Electron Spectroscopy and Related Phenomena 183 (1-3), 118–124 (2011).

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Journal Article

S. Böttcher, M. Weser, Y.S. Dedkov, K. Horn, E.N. Voloshina and B. Paulus: Graphene on ferromagnetic surfaces and its functionalization with water and ammonia. Nanoscale Research Letters 6, 214 (2011).

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Journal Article

R.S. Dhaka, A.K. Shukla, K. Horn and S.R. Barman: Photoemission study of Al adlayers on Mn. Physical Review B 84 (24), 245404 (2011).

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Journal Article

E.N. Voloshina, A.V. Generalov, M. Weser, S. Böttcher, K. Horn and Y. Dedkov: Structural and electronic properties of the graphene/Al/Ni(111) intercalation system. New Journal of Physics 13 (11), 113028 (2011).

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Journal Article

A.L. Walter, A. Bostwick, K.-J. Jeon, F. Speck, M. Ostler, T. Seyller, L. Moreschini, J.Y. Chang, M. Polini, R. Asgari, A.H. MacDonald, K. Horn and E. Rotenberg: Effective screening and the plasmaron bands in Graphene. Physical Review B 84 (8), 085410 (2011).

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Journal Article

A.L. Walter, K.-J. Jeon, A. Bostwick, F. Speck, M. Ostler, T. Seyller, L. Moreschini, Y.S. Kim, Y.J. Chang, K. Horn and E. Rotenberg: Highly p-doped epitaxial graphene obtained by fluorine intercalation. Applied Physics Letters 98 (18), 184102 (2011).

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Journal Article

A.L. Walter, S. Nie, A. Bostwick, K.S. Kim, L. Moreschini, J.Y. Chang, D. Innocenti, K. Horn, K.F. McCarty and E. Rotenberg: Electronic structure of graphene on single-crystal copper substrates. Physical Review B 84 (19), 195443 (2011).

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Journal Article

M. Weser, E.N. Voloshina, K. Horn and Y.S. Dedkov: Electronic structure and magnetic properties of the graphene/Fe/Ni(111) intercalation-like system. Physical Chemistry Chemical Physics 13 (16), 7534–7539 (2011).

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2010

Journal Article

A. Bostwick, T. Ohta, J.L. McChesney, K.V. Emtsev, F. Speck, T. Seyller, K. Horn, S.D. Kevan and E. Rotenberg: The interaction of quasi-particles in graphene with chemical dopants. New Journal of Physics 12, 125014 (2010).

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Journal Article

A. Bostwick, F. Speck, T. Seyller, K. Horn, M. Polini, R. Asgari, A.H. MacDonald and E. Rotenberg: Observation of Plasmarons in Quasi-Freestanding Doped Graphene. Science 328 (5981), 999–1002 (2010).

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Journal Article

Y.J. Chang, A. Bostwick, Y.S. Kim, K. Horn and E. Rotenberg: Structure and correlation effects in semiconducting SrTiO₃. Phyical Review B 81 (23), 235109 (2010).

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Journal Article

J.H. Dil, B. Hülsen, T.U. Kampen, P. Kratzer and K. Horn: Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon. Journal of Physics: Condensed Matter 22 (13), 135008 (2010).

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Journal Article

C. Enderlein, Y.S. Kim, A. Bostwick, E. Rotenberg and K. Horn: The formation of an energy gap in graphene on ruthenium by controlling the interface. New Journal of Physics 12 (3), 033014–1-033014–9 (2010).

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