Publications of Georg Neuhold

D. Wolfframm, D.A. Evans, G. Neuhold and K. Horn: Gold and silver Schottky barriers on ZnS(110). Journal of Applied Physics 87 (8), 3905–3911 (2000).

S.R. Barman, S.A. Ding, G. Neuhold, K. Horn, D. Wolfframm and D.A. Evans: Electronic band structure of zinc blende. Physical Review B 58 (11), 7053–7058 (1998).

J. Paggel, G. Neuhold, H. Haak and K. Horn: Growth morphology and electronic structure of Na films on Si(111)-(7×7) and Si(111)-Na(3×1). Surface Science 414 (1-2), 221–235 (1998).

G. Neuhold, S.R. Barman, K. Horn, W. Theis, P. Ebert and K. Urban: Enhanced surface metallic density of states in icosahedral quasicrystals. Physical Review B 58 (2), 734–738 (1998).

K.O. Magnusson, G. Neuhold, K. Horn and D.A. Evans: Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence-level states. Physical Review B 57 (15), 8945–8950 (1998).

G. Neuhold, T. Chassé, J. Paggel and K. Horn: Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B 54 (12), 8623–8626 (1996).

S.A. Ding, G. Neuhold, J.H. Weaver, P. Häberle, K. Horn, O. Brandt, H. Yang and K. Ploog: Electronic structure of cubic gallium nitride films grown on GaAs. Journal of Vacuum Science and Technology. A 14 (3), 819–824 (1996).

D. Wolfframm, P. Bailey, D.A. Evans, G. Neuhold and K. Horn: Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure. Journal of Vacuum Science and Technology A 14 (3), 844–848 (1996).

T. Chassé, J. Paggel, G. Neuhold, W. Theis and K. Horn: Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science 307-309 (A), 295–302 (1994).

G. Neuhold: Über die Valenzbandstruktur epitaktischer Metallfilme. Freie Universität Berlin