Fritz Haber Institute of the Max Planck Society

Publications of Karsten Horn

All genres

Journal Article (161)

Journal Article

J. Paggel, W. Theis, K. Horn, C. Jung, C. Hellwig and H. Petersen: Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy. Physical Review B 50 (24), 18 686–18 689 (1994).

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H. Öfner, R. Hofmann, J. Kraft, F.P. Netzer, J. Paggel and K. Horn: Metal-overlayer-induced charge-transfer effects in thin SiO₂-Si structures. Physical Review B 50 (20), 15 120–15 126 (1994).

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T. Chassé, J. Paggel, G. Neuhold, W. Theis and K. Horn: Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science 307-309 (A), 295–302 (1994).

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D.A. Evans and K. Horn: Quantisation of valence states observed in small Ag islands on the GaAs(110) surface. Surface Science 307-309 (A), 321–327 (1994).

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T. Chassé, W. Theis, T.P. Chen, D.A. Evans, K. Horn, C. Pettenkofer and W. Jaegermann: Interface chemistry and band bending induced by Pt deposition onto GaP(110). Surface Science 251-252, 472–477 (1991).

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C. Maierhofer, S. Kulkarni, M. Alonso, T. Reich and K. Horn: Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 9 (4), 2238–2243 (1991).

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D.R.T. Zahn, C. Maierhofer, A. Winter, M. Reckzügel, R. Srama, A. Thomas, K. Horn and W. Richter: The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy. Journal of Vacuum Science and Technology B 9 (4), 2206–2211 (1991).

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W.A. Henle, M.G. Ramsey, F.P. Netzer and K. Horn: Reversible Eu²⁺ ↔ Eu³⁺ transitions at Eu‐Si interfaces. Applied Physics Letters 58 (15), 1605–1607 (1991).

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J.F. van Acker, P.J.W. Weijs, J.C. Fuggle, K. Horn, H. Haak and K.H.J. Buschow: Photoemission investigation of the electronic structure of Fe-Pd and Fe-Pt alloys. Physical Review B 43 (11), 8903–8910 (1991).

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M. Alonso, R. Cimino and K. Horn: Surface photovoltage effects in photoemission from metal/GaP(110) interfaces: Temperature‐dependent Fermi level movement. Journal of Vacuum Science and Technology A 9 (3), 891–897 (1991).

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K. Horn: Semiconductor interface studies using core and valence level photoemission. Applied Physics A 51, 289–304 (1990).

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M. Alonso, R. Cimino and K. Horn: Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation. Physical Review Letters 64 (16), 1947–1950 (1990).

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W.G. Wilke, R. Seedorf and K. Horn: Valence band offset and interface chemistry of II–VI epitaxial layers grown on the (110) surface of III–V materials. Journal of Crystal Growth 101 (1-4), 620–627 (1990).

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M. Alonso, R. Cimino, K. Horn, T. Chasse and W. Braun: Temperature-dependent interface formation study of aluminium on GaP(110). Vacuum 41 (4-6), 1025–1028 (1990).

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M. Alonso, R. Cimino, C. Maierhofer, T. Chasse, W. Braun and K. Horn: Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110). Journal of Vacuum Science and Technology B 8, 955–963 (1990).

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T. Chasse, M. Alonso, R. Cimino, K. Horn and W. Braun: Indium interaction with GaP (110): example of an unreacted interface. Vacuum 41 (4-6), 835–838 (1990).

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W.G. Wilke, C. Maierhofer and K. Horn: Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well. Journal of Vacuum Science and Technology B 8 (4), 760–767 (1990).

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M. Scheffler, K. Horn, A.M. Bradshaw and K. Kambe: Angular-resolved photoemission from physisorbed xenon. Surface science 80, 69–77 (1979).

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P. Hoffmann, C.v. Muschwitz, K. Horn, K. Jacobi, A.M. Bradshaw, K. Kambe and M. Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), 327 (1979).

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Journal Article

K. Horn, M. Scheffler and A.M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), 822–825 (1978).

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