Publications of Karsten Horn

Journal Article (161)

Journal Article
S.R. Barman, C. Stampfl, P. Häberle and K. Horn: Photon-excited collective modes in a surface alloy. Physical Review B 61 (19), 12721–12724 (2000).
Journal Article
D. Wolfframm, D.A. Evans, G. Neuhold and K. Horn: Gold and silver Schottky barriers on ZnS(110). Journal of Applied Physics 87 (8), 3905–3911 (2000).
Journal Article
M.P. Casaletto, R. Zanoni, M. Carbone, M.N. Piancastelli, L. Aballe, K. Weiss and K. Horn: High resolution photoemissionstudy of ethanol on Si(100)2x1. Surface Science 447 (1-3), 237–244 (2000).
Journal Article
S.R. Barman and K. Horn: Photoemission study of electronic excitations at clean metal surfaces and thin metal films. Applied Physics A 69, 519–527 (1999).
Journal Article
P. Baumgärtel, J. Paggel, M. Hasselblatt, K. Horn, V. Fernandez, O. Schaff, J.H. Weaver, A.M. Bradshaw, D.P. Woodruff, E. Rotenberg and J. Denlinger: Structure determination of the (√3×√3)R30° boron phase on the Si(111) surface using photoelectron diffraction. Physical Review B 59 (20), 13014–13019 (1999).
Journal Article
S.R. Barman, S.A. Ding, G. Neuhold, K. Horn, D. Wolfframm and D.A. Evans: Electronic band structure of zinc blende. Physical Review B 58 (11), 7053–7058 (1998).
Journal Article
J. Paggel, G. Neuhold, H. Haak and K. Horn: Growth morphology and electronic structure of Na films on Si(111)-(7×7) and Si(111)-Na(3×1). Surface Science 414 (1-2), 221–235 (1998).
Journal Article
M. Carbon, M.N. Piancastelli, J.J. Paggel, C. Weindel and K. Horn: A high-resolution photoemission study of ethanol adsorption on Si(111)-(7×7). Surface Science 412-413, 441–446 (1998).
Journal Article
S.R. Barman, P. Häberle and K. Horn: Collective and single-particle excitations in the photoyield spectrum of Al. Physical Review B 58 (8), R4285–R4288 (1998).
Journal Article
G. Neuhold, S.R. Barman, K. Horn, W. Theis, P. Ebert and K. Urban: Enhanced surface metallic density of states in icosahedral quasicrystals. Physical Review B 58 (2), 734–738 (1998).
Journal Article
M. Moreno, H. Yang, M. Höricke, M. Alonso, J.A. Martín-Gago, R. Hey, K. Horn, J.L. Sacedón and K.H. Ploog: Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: Polar versus nonpolar interfaces. Physical Review B 57 (19), 12314–12323 (1998).
Journal Article
K.O. Magnusson, G. Neuhold, K. Horn and D.A. Evans: Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence-level states. Physical Review B 57 (15), 8945–8950 (1998).
Journal Article
S.R. Barman, K. Horn, P. Häberle, H. Ishida and A. Liebsch : Photoinduced plasmon excitations in alkali-metal overlayers. Physical Review B 57 (11), 6662–6665 (1998).
Journal Article
T. Chassé, G. Neuhold, J. Paggel and K. Horn: Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects. Applied Surface Science 115 (4), 326–335 (1997).
Journal Article
S.A. Ding, S.R. Barman, K. Horn, H. Yang, B. Yang, O. Brandt and K. Ploog: Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy. Applied Physics Letters 70 (18), 2407–2409 (1997).
Journal Article
G. Neuhold, T. Chassé, J. Paggel and K. Horn: Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B 54 (12), 8623–8626 (1996).
Journal Article
S. Schömann, K. Schmidt, H. Peisert, T. Chassé and K. Horn: Electronic and surfactant effects of As interlayers at AgInP (110) interfaces. Surface Science 352-354, 855–860 (1996).
Journal Article
D. Drews, A. Schneider, K. Horn and D.R.T. Zahn: Raman monitoring of ternary compound formation: ZnSxSe1 − x on GaAs(100). Journal of Crystal Growth 159 (1-4), 152–155 (1996).
Journal Article
S.A. Ding, G. Neuhold, J.H. Weaver, P. Häberle, K. Horn, O. Brandt, H. Yang and K. Ploog: Electronic structure of cubic gallium nitride films grown on GaAs. Journal of Vacuum Science and Technology. A 14 (3), 819–824 (1996).
Journal Article
D. Wolfframm, P. Bailey, D.A. Evans, G. Neuhold and K. Horn: Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure. Journal of Vacuum Science and Technology A 14 (3), 844–848 (1996).
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