Publications of Haiyuan Wang

Journal Article (5)

2021
Journal Article
S. Park, H. Wang, T. Schultz, D. Shin, R. Ovsyannikov, M. Zacharias, D. Maksimov, M. Meissner, Y. Hasegawa, T. Yamaguchi, S. Kera, A. Aljarb, M. Hakami, L.-J. Li, V. Tung, P. Amsalem, M. Rossi and N. Koch: Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures. Advanced Materials 33 (29), 2008677 (2021).
2020
Journal Article
M. Jacobs, J. Krumland, A.M. Valencia, H. Wang, M. Rossi and C. Cocchi: Ultrafast charge transfer and vibronic coupling in a laser-excited hybrid inorganic/organic interface. Advances in Physics: X 5 (1), 1749883 (2020).
2019
Journal Article
L. Zhao, N. Lin, Z. Han, X. Li, H. Wang and J. Cui: Regulation of the Crystal Structure Leading to the Bandgap Widening and Phonon Scattering Increasing in Cu3SnS4‐Cu3SbSe3 Chalcogenides. Advanced Electronic Materials 5 (10), 1900485 (2019).
Journal Article
H. Wang, S.V. Levchenko, T. Schultz, N. Koch, M. Scheffler and M. Rossi: Modulation of the Work Function by the Atomic Structure of Strong Organic Electron Acceptors on H‐Si(111). Advanced Electronic Materials 5 (5), 1800891 (2019).
2018
Journal Article
D.S. Park, G.J. Rees, H. Wang, D. Rata, A.J. Morris, I.V. Maznichenko, S. Ostanin, A. Bhatnagar, C.J. Choi, R.D.B. Jónsson, K. Kaufmann, R. Kashtiban, M. Walker, C.T. Chiang, E.B. Thorsteinsson, Z. Luo, I.S. Park, J.V. Hanna, I. Mertig, K. Dörr, H.P. Gíslason and C.F. McConville: Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping. Advanced Materials 30 (39), 1802025 (2018).
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