Publications of Eckard Pehlke

Journal Article (12)

1999
Journal Article
E. Pehlke and P. Kratzer: Density-functional study of hydrogen chemisorption on vicinal Si(001) surfaces. Physical Review B 59 (4), 2790–2800 (1999).
1998
Journal Article
M. Fuchs, M. Bockstedte, E. Pehlke and M. Scheffler: Pseudopotential study of binding properties of solids within generalized gradient approximations: The role of core-valence exchange correlation. Physical Review B 57 (4), 2134–2145 (1998).
1997
Journal Article
E. Pehlke, N. Moll, A. Kley and M. Scheffler: Shape and stability of quantum dots. Applied Physics A 65 (6), 525–534 (1997).
1996
Journal Article
N. Moll, A. Kley, E. Pehlke and M. Scheffler: GaAs equilibrium crystal shape from first-principles. Physical Review B 54 (12), 8844–8855 (1996).
1995
Journal Article
N. Moll, M. Bockstedte, M. Fuchs, E. Pehlke and M. Scheffler: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, 2550–2556 (1995).
Journal Article
E. Pehlke and M. Scheffler: Hydrogen adsorption on and desorption from Si(001). Proc. of the 22nd International Conference on the Physics of Semiconductors 549–552 (1995).
Journal Article
E. Pehlke and M. Scheffler: Theory of adsorption and desorption of H_2/Si(001). Physical Review Letters 74, 952–955 (1995).
1994
Journal Article
J. Dabrowski, E. Pehlke and M. Scheffler: Relation between the atomic structure and the surface-stress anisotropy: Calculations for the clean Si(001) surface. Journal of Vacuum Science and Technology B 12 (4), 2675–2677 (1994).
Journal Article
J. Dabrowski, E. Pehlke and M. Scheffler: Calculation of the surface stress anisotropy for the buckled Si(001)(1x2) and p(2x2) surfaces. Physical Review B 49 (7), 4790–4793 (1994).
Journal Article
S. Mukherjee, E. Pehlke and J. Tersoff: Calculation of temperature effects on the equilibrium crystal shape of Si near (100). Physical Review B 49 (3), 1919–1927 (1994).
1993
Journal Article
E. Pehlke and M. Scheffler: Evidence for site-sensitive screening of core holes at the Si and Ge(001) surface. Physical Review Letters 71 (14), 2338–2341 (1993).
Journal Article
J. Tersoff and E. Pehlke: Equilibrium crystal shape of silicon near (001). Physical Review B 47 (7), 4072–4075 (1993).

Conference Paper (4)

1997
Conference Paper
E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science. (Eds.): V. Fiorentini and F. Meloni. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 23–32 (1997).
1996
Conference Paper
E. Pehlke: Surface stress and the mesoscopic structure of solid surfaces. In: Thermodynamics of Surfaces: Minisymposium, May 11 - 13, 1995. (Eds.): W. Muschik and C. Papenfuss. (TUB-Dokumentation Wissenstransfer). Technische Universität, Berlin, 144–163 (1996).
Conference Paper
E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors. (Ed.): R. Zimmermann. World Scientific, Singapore, 1301–1304 (1996).
1992
Conference Paper
J. Dabrowski, E. Pehlke and M. Scheffler: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. (Eds.): P. Jiang and H.-Z. Zheng. World Scientific, Singapore, 389–392 (1992).
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