Publikationen von Matthias Scheffler

Methfessel, M.; Hennig, D.; Weber, S.; Scheffler, M.: Ab-initio calculation of the effect of d-band occupation on the relaxation of transition metal surfaces. Proc. 75th We-Heraeus-Seminar and 21st Annual Internat. Symposium on Electronic Structure of Solids, S. 174 - 176 (1991)

Methfessel, M.; Scheffler, M.: Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces. Physica B 172, S. 175 - 183 (1991)

Overhof, H.; Scheffler, M.; Weinert, C. C.: Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. Physical Review B 43, S. 12494 - 12506 (1991)

Scheffler, M.; Droste, C.; Fleszar, A.; Máca, F.; Wachutka, G.; Barzel, G.: A self-consistent surface-Green-function (SSGF) method. Physica B 172, S. 143 - 153 (1991)

Schmalz, A.; Aminpirooz, S.; Becker, L.; Haase, J.; Neugebauer, J.; Scheffler, M.; Batchelor, D. R.; Adams, D. L.; Bogh, E.: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, S. 2163 - 2166 (1991)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-antisite-like defects in III-V compounds. Physical Review Letters 65 (16), S. 2046 - 2049 (1990)

Doyen, G.; Koetter, E.; Vigneron , J.P.; Scheffler, M.: Theory of scanning tunneling microscopy. Applied Physics A 51, S. 281 - 288 (1990)

Gonze, X.; Käckell, P.; Scheffler, M.: Ghost states for separable, norm-conserving, ab initio pseudopotentials. Physical Review B 41 (17), S. 12264 - 12267 (1990)

Beeler, F.; Andersen, O. K.; Scheffler, M.: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles. Physical Review B 41, S. 1603 - 1624 (1990)

Biernacki, S.; Scheffler, M.: First-principles calculations of thermodynamic potentials of perfect-crystal semiconductors and for defects in semiconductors. Proc. 4th Brazilian School of Semiconductor Physics, S. 188 - 198 (1990)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-Antisite-like Defects in III-V Compounds. Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20), S. 469 - 472 (1990)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-Antisite-like Defects in III-V Compounds. Physical Review Letters 65 (16), S. 2046 - 2049 (1990)

Caldas, M. J.; Fazzio, A.; Dabrowski, J.; Scheffler, M.: Anion-Antisite Defects in GaAs: As and Sb. Internat. Journal of Quantum Chemistry: Quantum Chemistry Symposium 24, S. 563 - 567 (1990)

Dabrowski, J.; Scheffler, M.; Strehlow, R.: Silicon Donor in Gallium Arsenide and its Relation to DX Centers. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), S. 489 - 492 (1990)

Doyen, G.; Koetter, E.; Vigneron, J. P.; Scheffler, M.: Theory of Scanning Tunneling Microscopy. Applied Physics A: Materials Science and Processing 51, S. 281 - 288 (1990)

Gonze, X.; Käckell, P.; Scheffler, M.: Ghost States for Separable, Norm-Conserving, Ab-Initio Pseudopotentials. Physical Review B 41, S. 12264 - 12267 (1990)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), S. 215 - 218 (1990)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces. Extended Abstract: Electronic, Optical and Device Properties of Layered Structures 21, S. 71 - 75 (1990)

Maca, F.; Said, M.; Kambe, K.; Scheffler, M.: Electronic structure and angular resolved photoemission calculations for fcc and bcc silver surfaces. Vacuum 41 (1-3), S. 538 - 542 (1990)

Máca, F.; Said, M.; Kambe, K.; Scheffler, M.: Electronic Structure and Angular Resolved Photoemission Calculations for fcc and bcc Silver Surfaces. Vacuum 41, S. 538 - 542 (1990)