Publikationen von Matthias Scheffler

Ratsch, C.; Ruggerone, P.; Scheffler, M.: Study of strain and temperature dependence of metal epitaxy. In: Morphological Organization in Epitaxial Growth and Removal, S. 3 - 29 (Hg. Zhang, Z.; Lagally, M. G.). World Scientific, Singapore (1998)

Ratsch, C.; Ruggerone, P.; Scheffler, M.: Density-functional theory of surface diffusion and epitaxial growth of metals. In: Surface Diffusion: Atomistic and Collective Processes, S. 83 - 101 (Hg. Tringides, M. C.). Springer, Berlin (1997)

Ruggerone, P.; Ratsch, C.; Scheffler, M.: Density-functional theory of epitaxial growth of metals. In: Growth and properties of ultrathin epitaxial layers, S. 490 - 544 (Hg. King, D. A.; Woodruff, D. P.). Elsevier, Amsterdam (1997)

Scheffler, M.; Fiorentini, V.; Oppo, S.: Homoepitaxial growth of metals and the role of surfactants. In: Surface science: principles and current applications ; [based on invited lectures presented ... at the German-Australian Workshop on Surface Science held at Schloß Ringberg, Tegernsee, Germany, in January 1994], S. 219 - 231 (Hg. MacDonald, R. J.; Taglauer, E. C.; Wandelt, K. R.). Springer, Berlin (1996)

Pankratov, O.; Scheffler, M.: Clustering and Correlations on GaAs - Metal Interface. In: Semiconductor Interfaces at the Sub-Nanometer Scale, S. 121 - 126 (Hg. Salemink, H. W. M.; Pashley, M. D.). Springer, Dordrecht (1993)

Scherz, U.; Scheffler, M.: Density-functional theory of sp-bonded defects in III/V semiconductors. In: Imperfections in III/V Materials, S. 1 - 58 (Hg. Weber, E. R.). Academic Press, Boston (1993)

Scheffler, M.; Scherz, U.: Resonant Raman scattering at point defects in GaAs. In: Defects in Semiconductors, S. 353 - 358 (Hg. von Bardeleben, H.J.). Trans Tech Publications Ltd., Switzerland (1986)

Weinert, C. M.; Scheffler, M.: Chalcogen and vacancy pairs in silicon: Electronic structure and stabilities. In: Defects in Semiconductors, S. 25 - 30 (Hg. von Bardeleben, H.J.). Trans Tech Publications Ltd., Switzerland (1986)

Scheffler, M.; Bradshaw, A. M.: The electronic structure of adsorbed layers. In: Adsorption at Solid Surfaces, S. 165 - 257. Elsevier, Amsterdam (1983)

Scheffler, M.: Electronic structure of simple deep-level defects in semiconductors. In: Festkörperprobleme, S. 115 - 148 (Hg. Grosse, P.). Vieweg, Braunschweig (1982)

Scheffler, M.; Zimmermann, R. (Hg.): 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996. 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996), 3450 S.

Baldauf, C.; Ropo, M.; Blum, V.; Scheffler, M.: How mono-valent cations bend peptide turns and a first-principles database of amino acids and dipeptides. In: Proceedings of the International Conference of Computational Methods in Sciences and Engineering 2014: (ICCMSE 2014), S. 119 - 120 (Hg. Simos, T. E.; Kalogiratou, Z.; Monovasilis, T.). International Conference of Computational Methods in Sciences and Engineering 2014: (ICCMSE 2014), Athens, Greece, 04. April 2014 - 07. April 2014. AIP Publishing, Melville, NY (2014)

Mulakaluri, N.; Pentcheva, R.; Moritz, W.; Weiland, M.; Scheffler, M.: Theoretical evidence of a mixed adsorption mode of water on Fe₃O₄(001). 19th Annual VM Goldschmidt Conference, Davos, Switzerland, 21. Juni 2009. Geochimica et Cosmochimica Acta 73 (13), S. A913 - A913 (2009)

Buecking, N.; Butscher, S.; Richter, M.; Weber, C.; Declair, S.; Woerner, M.; Reimann, K.; Kratzer, P.; Scheffler, M.; Knorr, A.: Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases. In: Proceedings of SPIE, Bd. 6892, 689209. (2008)

Santoprete, R.; Koiller, B.; Capaz, R. B.; Kratzer, P.; Scheffler, M.: Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 745 - 746 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)

Wu, H.; Kratzer, P.; Scheffler, M.: Ab initio study of transition-metal silicide films on Si(001). In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 311 - 312 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)

Carlsson, J. M.; Scheffler, M.: Curvature effects on vacancies in nanotubes. In: Electronic Properties of Novel Nanostructures, S. 432 - 435 (Hg. Kuzmany, H.; Fink, J.; Mehring, M.; Roth, S.). XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, Austria, 12. März 2005 - 19. März 2005. American Institute of Physics, Melville, New York (2005)

Pentcheva, R.; Wagner, F.; Moritz, W.; Scheffler, M.: Structure, energetics and properties of Fe₃O₄(001) from first principles. In: High Performance Computing in Science and Engineering, Munich 2004, S. 375 - 381 (Hg. Wagner, S.; Hanke, W.; Bode, A.; Durst, F.). Transactions of the Secont Jont HLRB and KONWIHR Status Result Workshop, München, 02. März 2004 - 03. März 2004. Springer, Berlin (2005)

Ratsch, C.; Fielicke, A.; Behler, J.; Scheffler, M.; Helden, G. v.; Meijer, G.: Structure determination of small metal clusters by density-functional theory and comparison with experimental far-infrared spectra. In: Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, S. 1 - 4. NSTI Nanotechnology Conference and Trade Show, Anaheim, CA, USA, 08. Mai 2005 - 12. Mai 2005. (2005)

Scheffler, M.; Kratzer, P.; Wang, L. G.: Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots. In: Proceedings of the 4th Symposium on Atom-Scale Surface and Interface Dynamics, S. 3 - 7. 4th Symposium on Atomic-scale Surface and Interface Dynamics, Tsukuba, Japan, 02. März 2000 - 03. März 2000. (2000)