Publikationen von Matthias Scheffler

Polatoglou, H. M.; Methfessel, M.; Scheffler, M.: Vacancy-formation energies at the (111) surface and in bulk Al, Cu, Ag, and Rh. Physical Review B 48 (3), S. 1877 - 1883 (1993)

Scheffler, M.; Neugebauer, J.; Stumpf, R.: A step from surface fiction towards surface science. Journal of Physics: Condensed Matter 5, S. A91 - A94 (1993)

Stampfl, C.; Burchhardt, J.; Nielsen, M.; Adams, D. L.; Scheffler, M.; Over, H.; Moritz, W.: The structure of Al(111)-K-(√3 × √3)R30° determined by LEED: stable and metastable adsorption sites. Surface Science 287/288, S. 418 - 422 (1993)

Wenzien, B.; Bormet, J.; Neugebauer, J.; Scheffler, M.: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites. Surface Science 287/288, S. 559 - 563 (1993)

Ziegler, C.; Scherz, U.; Scheffler, M.: Pressure dependence of deep levels of the As antisite, the Ga-vacancy-As-interstitial pair, and of the stable and metastable states of EL2. Physical Review B 47 (24), S. 16624 - 16627 (1993)

Ourmazd, A.; Scheffler, M.; Heinemann, M.; Rouviere, J.-L.: Microscopic Properties of Thin Films: Learning About Point Defects. MRS Bulletin 17, S. 24 - 31 (1992)

Dabrowski, J.; Scheffler, M.: Self-consistent study of the electronic and structural properties of the clean Si(001) (2x1) surface. Applied Surface Science 56-58, S. 15 - 19 (1992)

Dabrowski, J.; Scheffler, M.: Theory of defect metastabilities in III-V compounds. Physica Scripta T45, S. 151 - 153 (1992)

Dabrowski, J.; Scheffler, M.: Defect metastability in III-V compounds. Mat. Sci. Forum 83-87, S. 735 - 750 (1992)

Doyen, G.; Drakova, D.; Mujica, V.; Scheffler, M.: Theory of the scanning tunneling microscope. Physica Status Solidi (A) 131 (1), S. 107 - 108 (1992)

Hebenstreit, J.; Scheffler, M.: Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110). Physical Review B 46 (16), S. 10134 - 10145 (1992)

Heinemann, M.; Scheffler, M.: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science 56-58, S. 628 - 631 (1992)

Methfessel, M.; Hennig, D.; Scheffler, M.: Calculated surface energies of the 4d transition metals: A study of bond-cutting models. Applied Physics A 55, S. 442 - 448 (1992)

Methfessel, M.; Hennig, D.; Scheffler, M.: Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals. Physical Review B 46 (8), S. 4816 - 4829 (1992)

Neugebauer, J.; Scheffler, M.: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), S. 16067 - 16080 (1992)

Stampfl, C.; Scheffler, M.; Over, H.; Burchhardt, J.; Nielsen, M.; Adams, D.; Moritz, W.: Identification of stable and metastable adsorption sites for K adsorbed on Al(111). Physical Review Letters 69 (10), S. 1532 - 1535 (1992)

Wachutka, G.; Fleszar, A.; Máca, F.; Scheffler, M.: Self-consistent Green-function method for the calculation of electronic properties of localized defects at surfaces and in the bulk. Journal of Physics: Condensed Matter 4, S. 2831 - 2844 (1992)

Alves, J. L. A.; Hebenstreit, J.; Scheffler, M.: Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces. Physical Review B 44 (12), S. 6188 - 6198 (1991)

Gonze, X.; Stumpf, R.; Scheffler, M.: Analysis of fully separable potentials. Physical Review B 44, S. 8503 - 8513 (1991)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters 67, S. 1031 - 1034 (1991)