Publikationen von Maria Alonso

Maierhofer, C., S. Kulkarni, M. Alonso, T. Reich und K. Horn: Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 9 (4), 2238–2243 (1991).

Alonso, M., R. Cimino und K. Horn: Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation. Physical Review Letters 64 (16), 1947–1950 (1990).

Alonso, M., R. Cimino, K. Horn, T. Chasse und W. Braun: Temperature-dependent interface formation study of aluminium on GaP(110). Vacuum 41 (4-6), 1025–1028 (1990).

Alonso, M., R. Cimino, C. Maierhofer, T. Chasse, W. Braun und K. Horn: Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110). Journal of Vacuum Science and Technology B 8, 955–963 (1990).

Chasse, T., M. Alonso, R. Cimino, K. Horn und W. Braun: Indium interaction with GaP (110): example of an unreacted interface. Vacuum 41 (4-6), 835–838 (1990).