Publikationen von Karsten Horn

Chassé, T., J. Paggel, G. Neuhold, W. Theis und K. Horn: Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science 307-309 (A), 295–302 (1994).

Evans, D.A. und K. Horn: Quantisation of valence states observed in small Ag islands on the GaAs(110) surface. Surface Science 307-309 (A), 321–327 (1994).

Öfner, H., R. Hofmann, J. Kraft, F.P. Netzer, J. Paggel und K. Horn: Metal-overlayer-induced charge-transfer effects in thin SiO₂-Si structures. Physical Review B 50 (20), 15 120–15 126 (1994).

Paggel, J., W. Theis, K. Horn, C. Jung, C. Hellwig und H. Petersen: Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy. Physical Review B 50 (24), 18 686–18 689 (1994).

Alonso, M., R. Cimino und K. Horn: Surface photovoltage effects in photoemission from metal/GaP(110) interfaces: Temperature‐dependent Fermi level movement. Journal of Vacuum Science and Technology A 9 (3), 891–897 (1991).

Chassé, T., W. Theis, T.P. Chen, D.A. Evans, K. Horn, C. Pettenkofer und W. Jaegermann: Interface chemistry and band bending induced by Pt deposition onto GaP(110). Surface Science 251-252, 472–477 (1991).

Henle, W.A., M.G. Ramsey, F.P. Netzer und K. Horn: Reversible Eu²⁺ ↔ Eu³⁺ transitions at Eu‐Si interfaces. Applied Physics Letters 58 (15), 1605–1607 (1991).

Maierhofer, C., S. Kulkarni, M. Alonso, T. Reich und K. Horn: Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 9 (4), 2238–2243 (1991).

van Acker, J.F., P.J.W. Weijs, J.C. Fuggle, K. Horn, H. Haak und K.H.J. Buschow: Photoemission investigation of the electronic structure of Fe-Pd and Fe-Pt alloys. Physical Review B 43 (11), 8903–8910 (1991).

Zahn, D.R.T., C. Maierhofer, A. Winter, M. Reckzügel, R. Srama, A. Thomas, K. Horn und W. Richter: The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy. Journal of Vacuum Science and Technology B 9 (4), 2206–2211 (1991).

Alonso, M., R. Cimino und K. Horn: Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation. Physical Review Letters 64 (16), 1947–1950 (1990).

Alonso, M., R. Cimino, K. Horn, T. Chasse und W. Braun: Temperature-dependent interface formation study of aluminium on GaP(110). Vacuum 41 (4-6), 1025–1028 (1990).

Alonso, M., R. Cimino, C. Maierhofer, T. Chasse, W. Braun und K. Horn: Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110). Journal of Vacuum Science and Technology B 8, 955–963 (1990).

Chasse, T., M. Alonso, R. Cimino, K. Horn und W. Braun: Indium interaction with GaP (110): example of an unreacted interface. Vacuum 41 (4-6), 835–838 (1990).

Horn, K.: Semiconductor interface studies using core and valence level photoemission. Applied Physics A 51, 289–304 (1990).

Wilke, W.G., C. Maierhofer und K. Horn: Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well. Journal of Vacuum Science and Technology B 8 (4), 760–767 (1990).

Wilke, W.G., R. Seedorf und K. Horn: Valence band offset and interface chemistry of II–VI epitaxial layers grown on the (110) surface of III–V materials. Journal of Crystal Growth 101 (1-4), 620–627 (1990).

Hoffmann, P., C.v. Muschwitz, K. Horn, K. Jacobi, A.M. Bradshaw, K. Kambe und M. Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), 327 (1979).

Scheffler, M., K. Horn, A.M. Bradshaw und K. Kambe: Angular-resolved photoemission from physisorbed xenon. Surface science 80, 69–77 (1979).

Horn, K., M. Scheffler und A.M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), 822–825 (1978).