Publikationen von Philippe Allongue

Allongue, P., P. Jiang, V. Kirchner, A.L. Trimmer und R. Schuster: Electrochemical micromachining of p-type silicon. Journal of Physical Chemistry B 108 (38), 14434–14439 (2004).

Allongue, P., V. Kieling und H. Gerischer: Atomic structure of Si surfaces etched in Triton/NaOH solutions. Journal of Physical Chemistry 99 (23), 9472–9478 (1995).

Allongue, P., V. Costa Kieling und H. Gerischer: Etching of silicon in NaOH solutions. II: Electrochemical studies of n-Si(111) and (100) and mechanism of the dissolution. Journal of the Electrochemical Society 140 (4), 1018–1026 (1993).

Allongue, P., V. Costa Kieling und H. Gerischer: Etching of silicon in NaOH solutions. I: In-situ STM investigation of n-Si(111). Journal of the Electrochemical Society 140 (4), 1009–1018 (1993).

Gerischer, H., P. Allongue und V. Costa Kieling: The mechanism of the anodic oxidation of silicon in acidic fluoride solutions revisited. Berichte der Bunsen-Gesellschaft für Physikalische Chemie 97 (6), 753–756 (1993).

Allongue, P., H. Brune und H. Gerischer: In-situ STM observations of the etching of n-Si(111) in NaOH solutions. Surface Science 275 (3), 414–423 (1992).

Allongue, P. und S. Blonkowski: Corrosion of III-V compounds; a comparative study of GaAs and InP: Part I. Electrochemical characterization based on Tafel plot measurements. Journal of Electroanalytical Chemistry 316 (1-2), 57–77 (1991).

Allongue, P. und S. Blonkowski: Corrosion of III–V compounds; a comparative study of GaAs and InP: II. Reaction scheme and influence of surface properties. Journal of Electroanalytical Chemistry 317 (1-2), 77–99 (1991).

Allongue, P., V. Kieling und H. Gerischer: Etching mechanism and atomic structure of H–Si(111) surfaces prepared in NH₄F. In: Electrochimica Acta., 1353–1360 (1995).