Publikationen von Catherine Stampfl

Stampfl, C., J. Neugebauer und M. Scheffler: Theoretical evidence for unusual bonding geometry and phase transitions of Na on Al(001). Surface Review and Letters 1 (2-3), 213–219 (1994).

Stampfl, C. und M. Scheffler: Theoretical identification of a (2 x 2) composite double layer ordered surface alloy of Na on Al(111). Surface Science 319 (1-2), L23–L28 (1994).

Stampfl, C., M. Scheffler, H. Over, J. Burchhardt, M. Nielsen, D.D. Adams und W. Moritz: LEED structural analysis of Al(111)-K(√3 x √3)R30°: Identification of stable and metastable adsorption sites. Physical Review B 49 (7), 4959–4972 (1994).

Stampfl, C., J. Burchhardt, M. Nielsen, D.L. Adams, M. Scheffler, H. Over und W. Moritz: The structure of Al(111)-K-(√3 × √3)R30° determined by LEED: stable and metastable adsorption sites. Surface Science 287/288, 418–422 (1993).

Stampfl, C., K. Kambe, J.D. Riley und D.F. Lynch: Angle-resolved photoemission theory for valence electrons: I. A calculation scheme by the multi-slice method. Journal of Physics: Condensed Matter 5, 8211–8224 (1993).

Stampfl, C., K. Kambe, J.D. Riley und D.F. Lynch: Calculation of the complex bulk and surface state bandstructure using the multislice matrix method. Journal of Physics: Condensed Matter 4, 8461–8476 (1992).

Stampfl, C., M. Scheffler, H. Over, J. Burchhardt, M. Nielsen, D. Adams und W. Moritz: Identification of stable and metastable adsorption sites for K adsorbed on Al(111). Physical Review Letters 69 (10), 1532–1535 (1992).

Reuter, K., C. Stampfl und M. Scheffler: Ab initio atomistic thermodynamics and statistical mechanics of surface properties and functions. In: Handbook of Materials Modeling. (Hrsg.): S. Yip. Springer, Dordrecht, 149–194 (2005).

Scheffler, M. und C. Stampfl: Theory of Adsorption on Metal Substrates. In: Electronic Structure. (Hrsg.): K. Horn und M. Scheffler. (Handbook of Surface Science, Vol. 2). Elsevier, Amsterdam, 286–356 (2000).

Van de Walle, C.G., J. Neugebauer und C. Stampfl: Native defects, impurities, and doping in GaN and related compounds: general remarks. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Hrsg.): S. Strite, I. Akasaki, H. Amano, und C. Wetzel. (EMIS datareview series, Vol. 23)., 275–280 (1999).

Van de Walle, C.G., J. Neugebauer und C. Stampfl: Native point defects in GaN and related compounds. In: Properties, processing and applications of gallium nitride and related semiconductors. (Hrsg.): J.H. Edgar, S. Strite, I. Akasaki, H. Amano, und C. Wetzel. (EMIS datareview series, Vol. 23). INSPEC, London, 281–283 (1999).

Stampfl, C.: Surface Processes and Phase Transitions from Ab Initio Atomistic Thermodynamics and Statistical Mechanics. Technisch Universität Berlin Berlin