Publications of Matthias Scheffler

Journal Article (600)

1994
Journal Article
Yamada, K.; Kraft, T.; Aisaka, T.; Ishii, A.; Scheffler, M.: Spin- and angle-resolved UPS spectrum calculation for ferromagnetic Nickel. Trans. Mat. Res. Soc. Jpn. 16A, pp. 259 - 262 (1994)
Journal Article
Ziegler, C.; Scherz, U.; Scheffler, M.: Pressure dependences of transition energies of the As antisite and the Ga-vacancy-As-interstitial pair compared to stable and metastable EL2. Materials Science Forum 143-147, pp. 995 - 1000 (1994)
1993
Journal Article
Aristov, V. Y.; Bertolo, M.; Jacobi, K.; Maca, F.; Scheffler, M.: Experimental and theoretical investigation of the electronic structure of silver deposited onto InSb(110) at 10 K. Physical Review B 48 (8), pp. 5555 - 5566 (1993)
Journal Article
Bechstedt, F.; Scheffler, M.: Alkali adsorption on GaAs(110): atomic structure, electronic states and surface dipoles. Surface Science Reports 18 (5-6), pp. 145 - 198 (1993)
Journal Article
Doyen, G.; Drakova, D.; Scheffler, M.: Green-function theory of scanning tunneling microscopy: Tunnel current and current density for clean metal surfaces. Physical Review B 47 (15), pp. 9778 - 9790 (1993)
Journal Article
Fiorentini, V.; Methfessel, M.; Scheffler, M.: Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons. Physical Review B 47 (20), pp. 13353 - 13362 (1993)
Journal Article
Fiorentini, V.; Methfessel, M.; Scheffler, M.: Reconstruction mechanism of fcc transition metal (001) surfaces. Physical Review Letters 71 (7), pp. 1051 - 1054 (1993)
Journal Article
Hennig, D.; Methfessel, M.; Scheffler, M.: Ab-initio calculation of the initial- and final-state effects on core-level shifts at transition metal surfaces. International Journal of Modern Physics B 7 (1-3), pp. 542 - 545 (1993)
Journal Article
Kraft, T.; Marcus, P. M.; Methfessel, M.; Scheffler, M.: Elastic constants of Cu and the instability of its bcc structure. Physical Review B 48 (9), pp. 5886 - 5890 (1993)
Journal Article
Kraft, T.; Methfessel, M.; van Schilfgaarde, M.; Scheffler, M.: Elastic properties of strained fcc and hcp iron. International Journal of Modern Physics B 7 (1-3), pp. 207 - 211 (1993)
Journal Article
Kraft, T.; Methfessel, M.; van Schilfgaarde, M.; Scheffler, M.: Effect of substrate-imposed strain on the growth of metallic overlayers calculated for fcc and hcp iron. Physical Review B 47 (15), pp. 9862 - 9869 (1993)
Journal Article
Methfessel, M.; Hennig, D.; Scheffler, M.: Ab-initio calculations of the initial- and final-state effects on the surface core-level shift of transition metals. Surface Science 287/288 (2), pp. 785 - 788 (1993)
Journal Article
Methfessel, M.; van Schilfgaarde, M.; Scheffler, M.: Electronic structure and bonding in the metallocarbohedrene Ti8C12. Physical Review Letters 70 (1), pp. 29 - 32 (1993)
Journal Article
Neugebauer, J.; Scheffler, M.: Theory of adsorption and desorption in high electric fields. Surface Science 287/288 (2), pp. 572 - 576 (1993)
Journal Article
Neugebauer, J.; Scheffler, M.: Mechanisms of island formation of alkali-metal adsorbates on Al(111). Physical Review Letters 71 (4), pp. 577 - 580 (1993)
Journal Article
Oppo, S.; Fiorentini, V.; Scheffler, M.: Theory of adsorption and surfactant effect of Sb on Ag(111). Physical Review Letters 71 (15), pp. 2437 - 2440 (1993)
Journal Article
Pankratov, O.; Scheffler, M.: Electron correlations on a potassium-covered GaAs(110) surface: ab-initio calculations of the Hubbard correlation energy. Surface Science 287/288 (2), pp. 584 - 587 (1993)
Journal Article
Pankratov, O.; Scheffler, M.: Bound bipolaron at the surface: The negative-U behavior of GaAs(110) with adsorbed alkali metals. Physical Review Letters 71 (17), pp. 2797 - 2800 (1993)
Journal Article
Pankratov, O.; Scheffler, M.: Hubbard correlations and charge transfer at the GaAs(110) surface with alkali adsorbates. Physical Review Letters 70 (3), pp. 351 - 354 (1993)
Journal Article
Pehlke, E.; Scheffler, M.: Evidence for site-sensitive screening of core holes at the Si and Ge(001) surface. Physical Review Letters 71 (14), pp. 2338 - 2341 (1993)
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