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Zeitschriftenartikel (8620)

8461.
Zeitschriftenartikel
Overhof, H.; Scheffler, M.; Weinert, C. M.: Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure. Materials Science and Engineering B 4, S. 315 - 319 (1989)
8462.
Zeitschriftenartikel
Paál, Z.; Zimmer, H.; Günter, J. R.; Schlögl, R.; Muhler, M.: Sintering of platinum-black in hydrogen: Morphology and catalytic activity. Journal of Catalysis 119 (1), S. 146 - 160 (1989)
8463.
Zeitschriftenartikel
Scheffler, M.: Chemical binding, stability and metastability of defects in semiconductors. Festkörperprobleme 29, S. 231 - 250 (1989)
8464.
Zeitschriftenartikel
Scherz, U.; Weider, D.; Scheffler, M.: Electronic and vibrational properties of deep centers in semiconductors. Egyp. J. Sol. 12, S. 1 (1989)
8465.
Zeitschriftenartikel
Weider, D.; Scheffler, M.; Scherz, U.: Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes. Mat. Sci. Forum 38-41, S. 299 - 304 (1989)
8466.
Zeitschriftenartikel
Meijer, G.; Ebben, M.; Meulen, J.J. t.: High-resolution spectroscopy of highly excited electronic states by pulsed-cw double resonance in a molecular beam. A study of the NO(E-A) system. Chemical Physics 127 (1-3), S. 173 - 187 (1988)
8467.
Zeitschriftenartikel
Illing, G.; Heskett, D.; Plummer, E.W.; Freund, H.-J.; Somers, J. S.; Lindner, T.; Bradshaw, A. M.; Buskotte, U.; Neumann, M.; Starke, U. et al.; Heinz, K.; DeAndres, P.L.; Saldin, D.; Pendry, J.B.: Adsorption and reaction of CO2 on Ni{110}: X-ray photoemission, near-edge X-ray absorption fine-structure and diffuse leed studies. Surface Science 206 (1-2), S. 1 - 19 (1988)
8468.
Zeitschriftenartikel
Wodtke, A. M.; Huwel, L.; Schluter, H.; Meijer, G.; Andersen, P.; Voges, H.: High-sensitivity detection of NO in a flame using a tunable ArF laser. Optics Letters 13 (10), S. 910 - 912 (1988)
8469.
Zeitschriftenartikel
Freund, H.-J.; Neumann, M.: Photoemission of Molecular Adsorbates. Applied Physics A 47 (1), S. 3 - 23 (1988)
8470.
Zeitschriftenartikel
Meijer, G.; Wodtke, A. M.; Voges, H.; Schlüter, H.; Andresen, P.: State‐selective detection of CO using a tunable ArF excimer laser. The Journal of Chemical Physics 89 (4), S. 2588 - 2589 (1988)
8471.
Zeitschriftenartikel
Wodtke, A. M.; Huwel, L.; Schlüter, H.; Voges, H.; Meijer, G.; Andresen, P.: Predissociation of O2 in the B state. The Journal of Chemical Physics 89 (4), S. 1929 - 1935 (1988)
8472.
Zeitschriftenartikel
Meijer, G.; Ebben, M.; Meulen, J.J. t.: High-resolution study of the NO E 2Σ+ ← A 2Σ+ transition by pulsed-cw double resonance. Chemical Physics Letters 147 (6), S. 525 - 528 (1988)
8473.
Zeitschriftenartikel
Heskett, D.; Frank, K. -.; Horn, K.; Koch, E. E.; Freund, H.-J.; Baddorf, A.; Tsuei, K. -.; Plummer, E. W.: Correlation between electron loss and inverse photoemission measurements of alkali metals on metal surfaces. Physical Review B 37 (17), S. 10387 - 10390 (1988)
8474.
Zeitschriftenartikel
Wolf, M.; Schotte, K. D.: Ising model with competing next-nearest-neighbour interactions on the Kagome lattice. Journal of Physics A: Mathematical and General 21 (9), S. 2195 - 2209 (1988)
8475.
Zeitschriftenartikel
Budde, F.; Hamza, A. V.; Ferm, P.; Ertl, G.; Weide, D.; Andresen, P.; Freund, H.-J.: Photodesorption of NO from Ni(100)-O. Physical Review Letters 60 (15), S. 1518 - 1521 (1988)
8476.
Zeitschriftenartikel
Andresen, P.; Bath, A.; Gröger, W.; Lülf, H. W.; Meijer, G.; Meulen, a. J. J. t.: Laser-induced fluorescence with tunable excimer lasers as a possible method for instantaneous temperature field measurements at high pressures: checks with an atmospheric flame. Applied Optics 27 (2), S. 365 - 378 (1988)
8477.
Zeitschriftenartikel
Bigelow, R.W.; Law, K.-Y.; Pan, D.H.-K.; Freund, H.-J.: Charge-transfer shake-up satellites accompanying core ionization in organic donor/acceptor molecules: bis(4-dimethylaminophenyl)squaraine and its derivatives. Journal of Electron Spectroscopy and Related Phenomena 46 (1), S. 1 - 17 (1988)
8478.
Zeitschriftenartikel
Dabrowski, J.; Scheffler, M.: Ab-initio calculations for native point defects in GaAs. Proc. 5th Conf. on Semi-Insulating III-V Materials, S. 37 - 42 (1988)
8479.
Zeitschriftenartikel
Dabrowski, J.; Scheffler, M.: The EL2 defect in GaAs. Proc. 8th Int. School on Defects in Crystals, S. 425 - 430 (1988)
8480.
Zeitschriftenartikel
Dabrowski, J.; Scheffler, M.: Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2. Physical Review Letters 60, S. 2183 - 2186 (1988)
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