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Zeitschriftenartikel (8621)
8441.
Zeitschriftenartikel
41 (4-6), S. 1021 - 1024 (1990)
A photoemission study of the Bi-InP(110) interface. Vacuum 8442.
Zeitschriftenartikel
41, S. 745 - 746 (1990)
Spatial Electron Current Distribution in a Scanning Tunneling Microscope. Vacuum 8443.
Zeitschriftenartikel
41 (4-6), S. 1118 - 1120 (1990)
Spin-resolved core and valence electron photoemission from non-epitaxially grown Pb layers on Pt(111). Vacuum 8444.
Zeitschriftenartikel
8 (4), S. 760 - 767 (1990)
Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well. Journal of Vacuum Science and Technology B 8445.
Zeitschriftenartikel
164 (2-3), S. 126 - 130 (1989)
Structure of silver microclusters. Chemical Physics Letters 8446.
Zeitschriftenartikel
223 (1-2), S. 33 - 55 (1989)
Thermal evolution of benzene adsorbate phases on a Os(0001) surface. Surface Science 8447.
Zeitschriftenartikel
138 (1), S. 251 - 263 (1989)
High-resolution spectroscopy on the Ã1B1 (0, 6, 0) ←X̃1A1(0, 0, 0) transition in SiCl2. Journal of Molecular Spectroscopy 8448.
Zeitschriftenartikel
220 (2-3), S. 243 - 252 (1989)
Promoter action of alkali in the activation of CO2 on Pd(111): A HREELS case study. Surface Science 8449.
Zeitschriftenartikel
218 (2-3), S. 467 - 493 (1989)
UV-laser-induced photodesorption of NO from NiO. Surface Science 8450.
Zeitschriftenartikel
1 (23), S. 3701 - 3709 (1989)
Anomalous electron energy-loss spectra of Ni(430) and a disordering of atomic steps. Journal of Physics: Condensed Matter 8451.
Zeitschriftenartikel
39 (6), S. 3475 - 3488 (1989)
π-d backbonding band dispersion and final-state effects for the (2×1) p2mg phase of CO on Ni(110). Physical Review B 8452.
Zeitschriftenartikel
209 (1-2), S. 159 - 172 (1989)
Influence of alkali co-adsorption on the adsorption and reaction of CO2 on Pd(111). Surface Science 8453.
Zeitschriftenartikel
Calculation of total energies, reaction and diffusion processes of transition-metal point defects in silicon. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), S. 983 - 986 (1989)
8454.
Zeitschriftenartikel
38-41, S. 257 - 262 (1989)
Theory of 4d-transition-metal ions in silicon: Total-energies, diffusion, electronic and magnetic properties. Mat. Sci. Forum 8455.
Zeitschriftenartikel
63, S. 290 - 293 (1989)
Negative thermal expansion of diamond and zinc-blende semiconductors. Physical Review Letters 8456.
Zeitschriftenartikel
38-41, S. 625 - 630 (1989)
Calculated thermodynamic potentials for the vacancy and the oxygen a-center in silicon. Mat. Sci. Forum 8457.
Zeitschriftenartikel
The As_Ga-As_i pair in GaAs, the arsenic antisite and the properties of EL2. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19), S. 1023 - 1026 (1989)
8458.
Zeitschriftenartikel
38-41, S. 51 - 58 (1989)
The EL2 defect in GaAs. Mat. Sci. Forum 8459.
Zeitschriftenartikel
40, S. 10391 - 10401 (1989)
The isolated arsenic antisite defect in GaAs and the properties of EL2. Physical Review B 8460.
Zeitschriftenartikel
8 (2), S. 81 - 93 (1989)
Symmetry and Dimensions of Membrane-Bound Nicotinic Acetylcholine Receptors from Torpedo californica Electric Tissue: Rapid Rearrangement to Two-Dimensional Ordered Lattices. Membrane Biochemistry