Publikationen von Karsten Horn
Alle Typen
Zeitschriftenartikel (161)
141.
Zeitschriftenartikel
50 (24), S. 18 686 - 18 689 (1994)
Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy. Physical Review B 142.
Zeitschriftenartikel
50 (20), S. 15 120 - 15 126 (1994)
Metal-overlayer-induced charge-transfer effects in thin SiO2-Si structures. Physical Review B 143.
Zeitschriftenartikel
307-309 (A), S. 295 - 302 (1994)
Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science 144.
Zeitschriftenartikel
307-309 (A), S. 321 - 327 (1994)
Quantisation of valence states observed in small Ag islands on the GaAs(110) surface. Surface Science 145.
Zeitschriftenartikel
251-252, S. 472 - 477 (1991)
Interface chemistry and band bending induced by Pt deposition onto GaP(110). Surface Science 146.
Zeitschriftenartikel
9 (4), S. 2238 - 2243 (1991)
Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 147.
Zeitschriftenartikel
9 (4), S. 2206 - 2211 (1991)
The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy. Journal of Vacuum Science and Technology B 148.
Zeitschriftenartikel
58 (15), S. 1605 - 1607 (1991)
Reversible Eu2+ ↔ Eu3+ transitions at Eu‐Si interfaces. Applied Physics Letters 149.
Zeitschriftenartikel
43 (11), S. 8903 - 8910 (1991)
Photoemission investigation of the electronic structure of Fe-Pd and Fe-Pt alloys. Physical Review B 150.
Zeitschriftenartikel
9 (3), S. 891 - 897 (1991)
Surface photovoltage effects in photoemission from metal/GaP(110) interfaces: Temperature‐dependent Fermi level movement. Journal of Vacuum Science and Technology A 151.
Zeitschriftenartikel
51, S. 289 - 304 (1990)
Semiconductor interface studies using core and valence level photoemission. Applied Physics A 152.
Zeitschriftenartikel
64 (16), S. 1947 - 1950 (1990)
Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation. Physical Review Letters 153.
Zeitschriftenartikel
101 (1-4), S. 620 - 627 (1990)
Valence band offset and interface chemistry of II–VI epitaxial layers grown on the (110) surface of III–V materials. Journal of Crystal Growth 154.
Zeitschriftenartikel
41 (4-6), S. 1025 - 1028 (1990)
Temperature-dependent interface formation study of aluminium on GaP(110). Vacuum 155.
Zeitschriftenartikel
8, S. 955 - 963 (1990)
Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110). Journal of Vacuum Science and Technology B 156.
Zeitschriftenartikel
41 (4-6), S. 835 - 838 (1990)
Indium interaction with GaP (110): example of an unreacted interface. Vacuum 157.
Zeitschriftenartikel
8 (4), S. 760 - 767 (1990)
Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well. Journal of Vacuum Science and Technology B 158.
Zeitschriftenartikel
80, S. 69 - 77 (1979)
Angular-resolved photoemission from physisorbed xenon. Surface science 159.
Zeitschriftenartikel
89 (1-3), S. 327 (1979)
Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 160.
Zeitschriftenartikel
41 (12), S. 822 - 825 (1978)
Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters