Publications of Peter Kratzer
All genres
Journal Article (50)
2004
Journal Article
Márquez, Juan, Peter Kratzer and Karl Jacobi: Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface.
Journal Article
Penev, Evgeni, Peter Kratzer and Matthias Scheffler: Atomic structure of the GaAs(001)-c(4 x 4) surface: first-principles evidence for diversity of heterodimer motifs.
Journal Article
Penev, Evgeni, , Peter Kratzer and Matthias Scheffler: Anisotropic diffusion of In adatoms on pseudomorphic InxGa1-xAs(001) films: First-principles total energy calculations.
Journal Article
Wu, Hua, Mahbube Hortamani, Peter Kratzer and Matthias Scheffler: First-principles study of ferromagnetism in epitaxial Si-Mn thin films on Si(001).
2003
Journal Article
Kratzer, Peter, Evgeni Penev and Matthias Scheffler: Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations.
Journal Article
Santoprete, Roberto, , , Peter Kratzer, and Matthias Scheffler: Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots.
Journal Article
Temko, Yevgeniy, Takayuki Suzuki, Peter Kratzer and Karl Jacobi: InAs quantum dots grown on the GaAs(113)A and GaAs(-1-1-3)B surfaces: A comparative STM study.
2002
Journal Article
Peter Kratzer, and Matthias Scheffler: , , Quantum Monte Carlo calculations of H2 dissociation on Si(001).
Journal Article
Geelhaar, Lutz, Yevgeniy Temko, Juan Márquez, Peter Kratzer and Karl Jacobi: Surface structure of GaAs(2 5 11).
Journal Article
Kratzer, Peter, Evgeni Penev and Matthias Scheffler: First-principles studies of kinetics in epitaxial growth of III-V semiconductors.
Journal Article
Kratzer, Peter and Matthias Scheffler: Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors.
2001
Journal Article
Aballe, Lucia, Celia Rogero, Peter Kratzer, Shubha Gokhale and Karsten Horn: Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111).
Journal Article
Geelhaar, Lutz, J. Márquez, Peter Kratzer and Karl Jacobi: GaAs(2511): A New Stable Surface within the Stereographic Triangle.
Journal Article
Peter Kratzer, Evgeni Penev and Matthias Scheffler: , , The role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study.
Journal Article
Kratzer, Peter and Matthias Scheffler: Surface Knowledge: Toward a Predictive Theory of Materials.
Journal Article
Márquez, Juan, Peter Kratzer, Lutz Geelhaar, Karl Jacobi and Matthias Scheffler: Atomic structure of the stoichiometric GaAs(114) surface.
Journal Article
Penev, Evgeni, Peter Kratzer and Matthias Scheffler: Effect of strain on surface diffusion in semiconductor heteroepitaxy.
Journal Article
Wang, L.G., Peter Kratzer, Matthias Scheffler and : Island dissolution during capping layer growth interruption.
2000
Journal Article
Peter Kratzer and Matthias Scheffler: , , , , , A novel imaging mechanism to determine the atomic structure of the GaAs(001)-(2x4) surface.
Journal Article
Wang, L.G., Peter Kratzer, Nikolaj Moll and Matthias Scheffler: Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate.