Publications of Jörg Neugebauer
All genres
Journal Article (65)
1998
Journal Article
Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler, and : Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior.
Journal Article
Jörg Neugebauer: and Possibility of a Mott-Hubbard ground state for the SiC(0001) surface.
Journal Article
Schwarz, Günther, Alexander Kley, Jörg Neugebauer, Jörg Neugebauer and Matthias Scheffler: Electronic and structural properties of vacancies on and below the GaP(110) surface.
Journal Article
Jörg Neugebauer: , and Theory of doping and defects in III-V nitrides.
Journal Article
Zywietz, Tosja K., Jörg Neugebauer and Matthias Scheffler: Adatom diffusion at GaN(0001) and (0001̄) surfaces.
Journal Article
Zywietz, Tosja K., Jörg Neugebauer, Matthias Scheffler and : Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors.
Journal Article
Zywietz, Tosja K., Jörg Neugebauer, Matthias Scheffler, and : Surface structures, surfactants and diffusion at cubic and wurtzite GaN.
1997
Journal Article
Bockstedte, Michel, Alexander Kley, Jörg Neugebauer and Matthias Scheffler: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics.
Journal Article
Jörg Neugebauer: , and Atomic structure and stability of AIN(0001) and (0001) surfaces.
Journal Article
Jörg Neugebauer: , and Energetics of H and NH2 on GaN(101̅0) and implications for the origin of nanopipe defects.
Journal Article
Jörg Neugebauer and : , , , Reconstructions of the GaN(0001‾) surface.
Journal Article
Jörg Neugebauer: and Small valence-band offsets at GaN/InGaN heterojunctions.
Journal Article
Jörg Neugebauer: and Defects and doping in III-V nitrides.
1996
Journal Article
Jörg Neugebauer: , and Energetics of AIN thin films and the implications for epitaxial growth on SiC.
1995
Journal Article
Kley, Alexander, Jörg Neugebauer and Matthias Scheffler: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction.
1994
Journal Article
Bormet, J., Jörg Neugebauer and Matthias Scheffler: Chemical trends and bonding mechanisms for isolated adsorbates on Al(111).
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Alkali-metal adsorbates on aluminum (111): The interplay and competition of adsorbate-substrate and adsorbate-adsorbate interactions.
Journal Article
Stampfl, Catherine, Jörg Neugebauer and Matthias Scheffler: Alkali-metal adsorption on Al(111) and Al(100).
Journal Article
Stampfl, Catherine, Jörg Neugebauer and Matthias Scheffler: Theoretical evidence for unusual bonding geometry and phase transitions of Na on Al(001).
1993
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Theory of adsorption and desorption in high electric fields.