Publications of Haiyuan Wang

Journal Article (5)

Journal Article
Park, S., H. Wang, T. Schultz, D. Shin, R. Ovsyannikov, M. Zacharias, D. Maksimov, M. Meissner, Y. Hasegawa, T. Yamaguchi, S. Kera, A. Aljarb, M. Hakami, L.-J. Li, V. Tung, P. Amsalem, M. Rossi and N. Koch: Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures. Advanced Materials 33 (29), 2008677 (2021).
Journal Article
Jacobs, M., J. Krumland, A.M. Valencia, H. Wang, M. Rossi and C. Cocchi: Ultrafast charge transfer and vibronic coupling in a laser-excited hybrid inorganic/organic interface. Advances in Physics: X 5 (1), 1749883 (2020).
Journal Article
Wang, H., S.V. Levchenko, T. Schultz, N. Koch, M. Scheffler and M. Rossi: Modulation of the Work Function by the Atomic Structure of Strong Organic Electron Acceptors on H‐Si(111). Advanced Electronic Materials 5 (5), 1800891 (2019).
Journal Article
Zhao, L., N. Lin, Z. Han, X. Li, H. Wang and J. Cui: Regulation of the Crystal Structure Leading to the Bandgap Widening and Phonon Scattering Increasing in Cu3SnS4‐Cu3SbSe3 Chalcogenides. Advanced Electronic Materials 5 (10), 1900485 (2019).
Journal Article
Park, D.S., G.J. Rees, H. Wang, D. Rata, A.J. Morris, I.V. Maznichenko, S. Ostanin, A. Bhatnagar, C.J. Choi, R.D.B. Jónsson, K. Kaufmann, R. Kashtiban, M. Walker, C.T. Chiang, E.B. Thorsteinsson, Z. Luo, I.S. Park, J.V. Hanna, I. Mertig, K. Dörr, H.P. Gíslason and C.F. McConville: Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping. Advanced Materials 30 (39), 1802025 (2018).
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