Publications of M. Scheffler
All genres
Journal Article (605)
581.
Journal Article
M. Scheffler: Calculation of the Green's function for a crystal surface or interface. Comput. Phys. Commun. 38, 403–413 (1985).
and 582.
Journal Article
, and
583.
Journal Article
Scheffler, M., , , , and : Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials 14a, 45–58 (1985).
584.
Journal Article
Scheffler, M., and : Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B 31, 6541–6551 (1985).
585.
Journal Article
M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111). Physical Review B 29, 692–702 (1984).
and 586.
Journal Article
M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 52, 851–854 (1984).
, and 587.
Journal Article
Scheffler, M., , and : Electronic structure and identification of deep defects in GaP. Physical Review B 29, 3269–3282 (1984).
588.
Journal Article
M. Scheffler and : Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 116, 18–27 (1983).
, , 589.
Journal Article
M. Scheffler and : Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 117/118, 137–139 (1983).
, 590.
Journal Article
M. Scheffler: Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 26 (10), 5706–5715 (1982).
, , and 591.
Journal Article
Scheffler, M., and : Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, 1765–1768 (1982).
592.
Journal Article
M. Scheffler: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, L645–L650 (1982).
and 593.
Journal Article
Scheffler, M., , and : Identification and properties of native defects in GaP. Physical Review Letters 47, 413 (1981).
594.
Journal Article
M. Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci., in press.
and 595.
Journal Article
Scheffler, M., K. Horn, A.M. Bradshaw and K. Kambe: Angular-resolved photoemission from physisorbed xenon. Surface science 80, 69–77 (1979).
596.
Journal Article
Bradshaw, A.M. and M. Scheffler: Lateral interactions in adsorbed layers. J. Vac. Sci. Tech. 16, 447–454 (1979).
597.
Journal Article
K. Horn, K. Jacobi, A.M. Bradshaw, and M. Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), 327 (1979).
, , 598.
Journal Article
and
599.
Journal Article
Scheffler, M.: The influence of lateral interactions on the vibrational spectrum of adsorbed CO. Surface Science 81, 562–570 (1979).
600.
Journal Article
Horn, K., M. Scheffler and A.M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), 822–825 (1978).