Publications of M. Scheffler

Journal Article (605)

581.
Journal Article
Máca, F. and M. Scheffler: Calculation of the Green's function for a crystal surface or interface. Comput. Phys. Commun. 38, 403–413 (1985).
582.
Journal Article
Meyer, B.K., J.-M. Spaeth and M. Scheffler: As_Ga-induced dichroism in GaAs. Physical Review Letters 54, 1333–1333 (1985).
583.
Journal Article
Scheffler, M., F. Beeler, O. Jepsen, O. Gunnarsson, O.K. Andersen and G.B. Bachelet: Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials 14a, 45–58 (1985).
584.
Journal Article
Scheffler, M., J.P. Vigneron and G.B. Bachelet: Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B 31, 6541–6551 (1985).
585.
Journal Article
Hora, R. and M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111). Physical Review B 29, 692–702 (1984).
586.
Journal Article
Meyer, B.K., J.-M. Spaeth and M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 52, 851–854 (1984).
587.
Journal Article
Scheffler, M., J. Bernholc, N.O. Lipari and S.T. Pantelides: Electronic structure and identification of deep defects in GaP. Physical Review B 29, 3269–3282 (1984).
588.
Journal Article
Pantelides, S.T., I. Ivanov, M. Scheffler and J.P. Vigneron: Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 116, 18–27 (1983).
589.
Journal Article
Vigneron, J.P., M. Scheffler and S.T. Pantelides: Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 117/118, 137–139 (1983).
590.
Journal Article
Bernholc, J., N.O. Lipari, S.T. Pantelides and M. Scheffler: Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 26 (10), 5706–5715 (1982).
591.
Journal Article
Scheffler, M., J.P. Vigneron and G.B. Bachelet: Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, 1765–1768 (1982).
592.
Journal Article
Schirmer, O. and M. Scheffler: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, L645–L650 (1982).
593.
Journal Article
Scheffler, M., S.T. Pantelides, N.O. Lipari and J. Bernholc: Identification and properties of native defects in GaP. Physical Review Letters 47, 413 (1981).
594.
Journal Article
Hora, R. and M. Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci., in press.
595.
Journal Article
Scheffler, M., K. Horn, A.M. Bradshaw and K. Kambe: Angular-resolved photoemission from physisorbed xenon. Surface science 80, 69–77 (1979).
596.
Journal Article
Bradshaw, A.M. and M. Scheffler: Lateral interactions in adsorbed layers. J. Vac. Sci. Tech. 16, 447–454 (1979).
597.
Journal Article
Hoffmann, P., C.v. Muschwitz, K. Horn, K. Jacobi, A.M. Bradshaw, K. Kambe and M. Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), 327 (1979).
598.
Journal Article
Kambe, K. and M. Scheffler: Theory of photoexcitation of adsorbates. Surface science 89, 262 (1979).
599.
Journal Article
Scheffler, M.: The influence of lateral interactions on the vibrational spectrum of adsorbed CO. Surface Science 81, 562–570 (1979).
600.
Journal Article
Horn, K., M. Scheffler and A.M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), 822–825 (1978).
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