Publications of Matthias Scheffler

Yu, B.D. and M. Scheffler: Anisotropy of growth of the close-packed surfaces of silver. Physical Review Letters 77 (6), 1095–1098 (1996).

Berndt, W., D. Weick, C. Stampfl, A.M. Bradshaw and M. Scheffler: Structural analysis of the two c(2x2) phases of Na adsorbed on Al(100). Surface Science 330 (2), 182–192 (1995).

Becker, P., U. Kütgens, J. Stumpel, S. Biernacki and M. Scheffler: The silicon-28 lattice parameter. PTB-Mitteilungen 105, 95–98 (1995).

Burchhardt, J., M.M. Nielsen, D.L. Adams, E. Lundgren, J.N. Andersen, C. Stampfl, M. Scheffler, A. Schmalz, S. Aminpirooz and J. Haase: Formation and structural analysis of a surface alloy: Al(111)-(2 x 2)-Na. Physical Review Letters 74, 1617–1620 (1995).

Finnis, M.W., R. Kaschner, C. Kruse, J. Furthmüller and M. Scheffler: The interaction of a point charge with a metal surface: theory and calculations for (111), (100) and (110) aluminium surfaces. Journal of Physics: Condens. Matter 7, 2001–2019 (1995).

Fiorentini, V., M. Methfessel and M. Scheffler: Surface stress, relaxation and reconstruction in fcc transition metals. Vuoto XXIV, 21–24 (1995).

Fiorentini, V., S. Oppo and M. Scheffler: Towards an understanding of surfactant action on the epitaxial growth of metals: the case of Sb on Ag(111). Applied Physics A 60, 399–402 (1995).

Furthmüller, J., G. Kresse, J. Hafner, R. Stumpf and M. Scheffler: Site-selective adsorption of C atoms on Al(111) surfaces. Physical Review Letters 74 (25), 5084–5087 (1995).

Groß, A., S. Wilke and M. Scheffler: Six-dimensional quantum dynamics of adsorption and desorption of H_2 at Pd(100): Steering and steric effects. Physical Review Letters 75, 2718–2721 (1995).

Hammer, B. and M. Scheffler: Local chemical reactivity of a metal alloy surface. Physical Review Letters 74, 3487–3490 (1995).

Hanbicki, A.T., A.P. Baddorf, E.W. Plummer, B. Hammer and M. Scheffler: The interaction of hydrogen with the (110) surface of NiAl. Surface Science 331-333, 811–817 (1995).

Kley, A., J. Neugebauer and M. Scheffler: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors 775–782 (1995).

Kohler, B., P. Ruggerone, S. Wilke and M. Scheffler: Frustrated H-induced instability of Mo(110). Physical Review Letters 74, 1387–1390 (1995).

Methfessel, M., D. Hennig and M. Scheffler: Enhanced screening of core holes at transition-metal surfaces. Surface Review and Letters 2, 197–201 (1995).

Moll, N., M. Bockstedte, M. Fuchs, E. Pehlke and M. Scheffler: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, 2550–2556 (1995).

Oppo, S., V. Fiorentini and M. Scheffler: Size-effect surfactants for metal-on-metal growth: Sb on Ag(111). Vuoto XXIV, 37–39 (1995).

Pankratov, O. and M. Scheffler: Formation of localized excitons and the breaking of chemical bonds at III-V (110) surfaces. Proc. of the 22nd International Conference on the Physics of Semiconductors 485–488 (1995).

Pankratov, O. and M. Scheffler: Localized excitons and breaking of chemical bonds at III-V (110) surfaces. Physical Review Letters 75, 701–704 (1995).

Pehlke, E. and M. Scheffler: Hydrogen adsorption on and desorption from Si(001). Proc. of the 22nd International Conference on the Physics of Semiconductors 549–552 (1995).

Pehlke, E. and M. Scheffler: Theory of adsorption and desorption of H_2/Si(001). Physical Review Letters 74, 952–955 (1995).