Publications of Eckard Pehlke

Pehlke, E.; Kratzer, P.: Density-functional study of hydrogen chemisorption on vicinal Si(001) surfaces. Physical Review B 59 (4), pp. 2790 - 2800 (1999)

Fuchs, M.; Bockstedte, M.; Pehlke, E.; Scheffler, M.: Pseudopotential study of binding properties of solids within generalized gradient approximations: The role of core-valence exchange correlation. Physical Review B 57 (4), pp. 2134 - 2145 (1998)

Pehlke, E.; Moll, N.; Kley, A.; Scheffler, M.: Shape and stability of quantum dots. Applied Physics A 65 (6), pp. 525 - 534 (1997)

Moll, N.; Kley, A.; Pehlke, E.; Scheffler, M.: GaAs equilibrium crystal shape from first-principles. Physical Review B 54 (12), pp. 8844 - 8855 (1996)

Moll, N.; Bockstedte, M.; Fuchs, M.; Pehlke, E.; Scheffler, M.: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, pp. 2550 - 2556 (1995)

Pehlke, E.; Scheffler, M.: Hydrogen adsorption on and desorption from Si(001). Proc. of the 22nd International Conference on the Physics of Semiconductors, pp. 549 - 552 (1995)

Pehlke, E.; Scheffler, M.: Theory of adsorption and desorption of H_2/Si(001). Physical Review Letters 74, pp. 952 - 955 (1995)

Dabrowski, J.; Pehlke, E.; Scheffler, M.: Relation between the atomic structure and the surface-stress anisotropy: Calculations for the clean Si(001) surface. Journal of Vacuum Science and Technology B 12 (4), pp. 2675 - 2677 (1994)

Dabrowski, J.; Pehlke, E.; Scheffler, M.: Calculation of the surface stress anisotropy for the buckled Si(001)(1x2) and p(2x2) surfaces. Physical Review B 49 (7), pp. 4790 - 4793 (1994)

Mukherjee, S.; Pehlke, E.; Tersoff, J.: Calculation of temperature effects on the equilibrium crystal shape of Si near (100). Physical Review B 49 (3), pp. 1919 - 1927 (1994)

Pehlke, E.; Scheffler, M.: Evidence for site-sensitive screening of core holes at the Si and Ge(001) surface. Physical Review Letters 71 (14), pp. 2338 - 2341 (1993)

Tersoff, J.; Pehlke, E.: Equilibrium crystal shape of silicon near (001). Physical Review B 47 (7), pp. 4072 - 4075 (1993)

Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science, pp. 23 - 32 (Eds. Fiorentini, V.; Meloni, F.). VI Italian-Swiss Workshop on, S. Margherita di Pula, (Cagliari), September 28, 1996 - October 02, 1996. Italian Physical Society, Bologna (1997)

Pehlke, E.: Surface stress and the mesoscopic structure of solid surfaces. In: Thermodynamics of Surfaces: Minisymposium, May 11 - 13, 1995, pp. 144 - 163 (Eds. Muschik, W.; Papenfuss, C.). Technische Universität, Berlin (1996)

Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors, pp. 1301 - 1304 (Ed. Zimmermann, R.). International Conference on the Physics of Semiconductors, Berlin, Germany, July 21, 1996 - July 26, 1996. World Scientific, Singapore (1996)

Dabrowski, J.; Pehlke, E.; Scheffler, M.: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992, pp. 389 - 392 (Eds. Jiang, P.; Zheng, H.-Z.). 21st International Conference on the Physics of Semiconductors (ICPS-21), Beijing, China, August 10, 1992 - August 14, 1992. World Scientific, Singapore (1992)